參數(shù)資料
型號(hào)： TS636
廠商： 意法半導(dǎo)體
英文描述： ESD BAG, METAL-IN, W/ZIPPER, 10" X14"
中文描述： 差動(dòng)可變?cè)鲆娣糯笃鞯腁DSL線路接口
文件頁(yè)數(shù)： 3/9頁(yè)
文件大?。?/td> 121K
代理商： TS636
TS636
3/9
ELECTRICAL CHARACTERISTICS.
V
CC
=
±
6Volts, T
amb
= 25°C (unless otherwise specified).
Symbol
DC PERFORMANCE
I
ib
Input Bias Current (AGND pin)
I
CC
Total Supply Current
V
OFFSET
Differential Input Offset Voltage
SVR
Supply Voltage Rejection Ratio
POWER DOWN MODE
I
ccpdw
Power Down Total Consumption Power Down Mode
Z
out
Power Down Output Impedance Power Down Mode
AC PERFORMANCE
Z
in
Input Impedance
High Level Output Voltage
R
L
connected to GND
Low Level Output Voltage
R
L
connected to GND
Voltage Gain
Gain monotonicity guaranteed by design
P
AV
Precision of the Voltage Gain
A
vstep
Step Value
Gain Mismatch between Both
Channels
Bandwidth @ -3dB
R
L
= 500
, C
L
= 15pF
R
bw
Bandwidth Roll-off
Bandwidth @ -3dB
R
L
= 500
, C
L
= 15pF
SR
Slew Rate (gain independent)
NOISE AND DISTORTION
in
Equivalent Input Noise Current
Parameter
Test Condition
Min.
Typ.
Max
Unit
8
μ
A
mA
mV
dB
No load, V
out
= 0
V
in
= 0, A
V
= 30dB
A
V
= 0dB
28
6
50
80
150
μ
A
100k
150k
//5pF
100k
//5pF
V
OH
R
L
= 500
4
4.5
V
V
OL
R
L
= 500
-4.5
-4
V
A
V
F= 1MHz
-9
30
dB
F= 1MHz
F= 1MHz
-1.4
2.4
1.4
3.6
dB
dB
3
A
vmis
F= 1MHz
1
dB
B
w
A
V
= -9dB
A
V
= +30dB
A
V
= +30dB, F = 1MHz
|Source|
Sink
V
o
= 2Vpeak
45
9
100
17
0.08
28
22
90
MHz
MHz
dB
I
o
17
17
40
mA
V/
μ
s
F = 100kHz
F = 100kHz
A
V
= 30dB
1Vpeak, F = 150kHz,
A
V
= +30dB, R
L
= 500
//15pF
H2
H3
H4
H5
V
out
= 1Vpeak, A
V
= +30dB
R
L
= 500
//15pF
@ 80kHz
@ 380kHz
@640kHz
@740kHz
V
out
= 1Vpeak, A
V
= +30dB
R
L
= 500
//15pF
@ 60kHz
@ 90kHz
@220kHz
@230kHz
1.6
pA/
√
Hz
en
Equivalent Input Noise Voltage
4.7
nV/
√
Hz
THD30
Harmonic Distorsion
dBc
-70
-93
-98
-99
IM3_1
Third Order Intermodulation
Product
F1 = 180kHz, F2 = 280kHz
dBc
-77
-85
-86
-87
IM3_2
Third Order Intermodulation
Product
F1 = 70kHz, F2 = 80kHz
dBc
-77
-79
-83
-84
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