參數資料
| 型號： | TS80C51RD2-MCA |
| 廠商： | Atmel |
| 文件頁數： | 71/84頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC MCU 8BIT 768BYTE 40MHZ 40-DIP |
| 標準包裝： | 216 |
| 系列： | 80C |
| 核心處理器： | 8051 |
| 芯體尺寸： | 8-位 |
| 速度： | 40/20MHz |
| 連通性： | UART/USART |
| 外圍設備： | POR，PWM，WDT |
| 輸入/輸出數： | 32 |
| 程序存儲器類型： | ROMless |
| RAM 容量： | 768 x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 4.5 V ~ 5.5 V |
| 振蕩器型： | 內部 |
| 工作溫度： | 0°C ~ 70°C |
| 封裝/外殼： | 40-DIP（0.600"，15.24mm） |
| 包裝： | 管件 |
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2007-2012 Microchip Technology Inc.
DS70292G-page 75
dsPIC33FJ32GP302/304, dsPIC33FJ64GPX02/X04, AND dsPIC33FJ128GPX02/X04
5.6.1
PROGRAMMING ALGORITHM FOR
FLASH PROGRAM MEMORY
Programmers can program one row of program Flash
memory at a time. To do this, it is necessary to erase
the 8-row erase page that contains the desired row.
The general process is:
1.
Read
eight
rows
of
program
memory
(512 instructions) and store in data RAM.
2.
Update the program data in RAM with the
desired new data.
3.
Erase the block (see Example 5-1):
a) Set the NVMOP bits (NVMCON<3:0>) to
‘0010’ to configure for block erase. Set the
ERASE (NVMCON<6>) and WREN
(NVMCON<14>) bits.
b) Write the starting address of the page to be
erased into the TBLPAG and W registers.
c)
Write 0x55 to NVMKEY.
d) Write 0xAA to NVMKEY.
e) Set the WR bit (NVMCON<15>). The erase
cycle begins and the CPU stalls for the dura-
tion of the erase cycle. When the erase is
done, the WR bit is cleared automatically.
4.
Write the first 64 instructions from data RAM into
the program memory buffers (see Example 5-2).
5.
Write the program block to Flash memory:
a) Set the NVMOP bits to ‘0001’ to configure
for row programming. Clear the ERASE bit
and set the WREN bit.
b) Write 0x55 to NVMKEY.
c)
Write 0xAA to NVMKEY.
d)
Set the WR bit. The programming cycle
begins and the CPU stalls for the duration of
the write cycle. When the write to Flash mem-
ory is done, the WR bit is cleared
automatically.
6.
Repeat steps 4 and 5, using the next available
64 instructions from the block in data RAM by
incrementing the value in TBLPAG, until all
512 instructions are written back to Flash memory.
For protection against accidental operations, the write
initiate sequence for NVMKEY must be used to allow
any erase or program operation to proceed. After the
programming command has been executed, the user
application must wait for the programming time until
programming is complete. The two instructions
following the start of the programming sequence
should be NOPs, as shown in Example 5-3.
EXAMPLE 5-1:
ERASING A PROGRAM MEMORY PAGE
; Set up NVMCON for block erase operation
MOV
#0x4042, W0
;
MOV
W0, NVMCON
; Initialize NVMCON
; Init pointer to row to be ERASED
MOV
#tblpage(PROG_ADDR), W0
;
MOV
W0, TBLPAG
; Initialize PM Page Boundary SFR
MOV
#tbloffset(PROG_ADDR), W0
; Initialize in-page EA[15:0] pointer
TBLWTL W0, [W0]
; Set base address of erase block
DISI
#5
; Block all interrupts with priority <7
; for next 5 instructions
MOV
#0x55, W0
MOV
W0, NVMKEY
; Write the 55 key
MOV
#0xAA, W1
;
MOV
W1, NVMKEY
; Write the AA key
BSET
NVMCON, #WR
; Start the erase sequence
NOP
; Insert two NOPs after the erase
NOP
; command is asserted
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相關代理商/技術參數 |
參數描述 |
|---|---|
| TS80C51RD2-MCAD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8-Bit Microcontroller |
| TS80C51RD2-MCB | 功能描述:IC MCU 8BIT 768BYTE 40MHZ 44PLCC RoHS:否 類別:集成電路 (IC) >> 嵌入式 - 微控制器， 系列:80C 標準包裝:1,500 系列:AVR® ATtiny 核心處理器:AVR 芯體尺寸:8-位 速度:16MHz 連通性:I²C，LIN，SPI，UART/USART，USI 外圍設備:欠壓檢測/復位，POR，PWM，溫度傳感器，WDT 輸入/輸出數:16 程序存儲器容量:8KB（4K x 16） 程序存儲器類型:閃存 EEPROM 大小:512 x 8 RAM 容量:512 x 8 電壓 - 電源 (Vcc/Vdd):2.7 V ~ 5.5 V 數據轉換器:A/D 11x10b 振蕩器型:內部 工作溫度:-40°C ~ 125°C 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 包裝:帶卷 (TR) |
| TS80C51RD2-MCBB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8-Bit Microcontroller |
| TS80C51RD2-MCBD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8-Bit Microcontroller |
| TS80C51RD2-MCBR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8-Bit Microcontroller |
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