參數(shù)資料
型號: TS8405P
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: Single P-Channel 1.8V Specified MicroSURF⑩
中文描述: 單P通道1.8V的指定MicroSURF⑩
文件頁數(shù): 2/12頁
文件大小: 394K
代理商: TS8405P
Electrical Characteristics
T
A
=25°C unless otherwise specified
PRELIMINARY DATA SHEET
2
I
DSS
Zero Gate Voltage Drain Current
V
DS
=-12V, V
GS
=0V
-1
μA
Zero Gate Voltage Drain Current
V
DS
=-12V, V
GS
=0V, T=70°C
-5
μA
I
GSS
Gate-Body Leakage
V
GS
=±8V, V
DS
=0V
±100
nA
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
, I
D
=-250μA
-0.7
V
Drain-Source On-State Resistance
V
GS
=-4.5V, I
D
=-1A
50
m
Drain-Source On-State Resistance
V
GS
=-2.5V, I
D
=-1A
70
m
Drain-Source On-State Resistance
V
GS
=-1.8V, I
D
=-1A
90
m
C
iss
Input Capacitance
V
DS
=-12V, V
GS
=0V, F=1MHZ
800
pF
C
oss
Output Capacitance
V
DS
=-12V, V
GS
=0V, F=1MHZ
250
pF
C
rss
Reverse Transfer Capacitance
V
DS
=-12V, V
GS
=0V, F=1MHZ
100
pF
Q
g
Total Gate Charge
V
GS
=-4.5V, I
D
=-1A, V
DS
=-6V
9.0
nC
V
SD
Diode Forward Voltage
I
S
=-1A, V
GS
=0V
-0.71
V
t
rr
Source-Drain Reverse Recovery Time
I
S
=-1A, V
GS
=0V, di/dt=100A/μs
40
ns
r
DS(on)
9/14/03 Rev5
T
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