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參數(shù)資料
| 型號(hào)： | TSC80251G2D-L16CER |
| 廠商： | Atmel |
| 文件頁(yè)數(shù)： | 35/77頁(yè) |
| 文件大小： | 0K |
| 描述： | IC MCU 8BIT 16MHZ LO VOLT 44VQFP |
| 標(biāo)準(zhǔn)包裝： | 1,500 |
| 系列： | 8x251 |
| 核心處理器： | C251 |
| 芯體尺寸： | 8/16-位 |
| 速度： | 16MHz |
| 連通性： | EBI/EMI，I²C，Microwire，SPI，UART/USART |
| 外圍設(shè)備： | POR，PWM，WDT |
| 輸入/輸出數(shù)： | 32 |
| 程序存儲(chǔ)器類型： | ROMless |
| RAM 容量： | 1K x 8 |
| 電壓 - 電源 (Vcc/Vdd)： | 2.7 V ~ 5.5 V |
| 振蕩器型： | 內(nèi)部 |
| 工作溫度： | 0°C ~ 70°C |
| 封裝/外殼： | 44-LQFP |
| 包裝： | 帶卷 (TR) |
| 其它名稱： | TSC80251G2DL16CER |
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40
AT/TSC8x251G2D
4135F–8051–11/06
Programming and Verifying Non-volatile Memory
Internal Features
The internal non-volatile memory of the TSC80251G2D derivatives contains five differ-
ent areas:
Code Memory
Configuration Bytes
Lock Bits
Encryption Array
Signature Bytes
EPROM/OTPROM Devices
All the internal non-volatile memory but the Signature Bytes of the TSC87251G2D prod-
ucts is made of EPROM cells. The Signature Bytes of the TSC87251G2D products are
made of Mask ROM.
The TSC87251G2D products are programmed and verified in the same manner as
Atmel’s TSC87251G1A, using a SINGLE-PULSE algorithm, which programs at
VPP = 12.75V using only one 100μs pulse per byte. This results in a programming time
of less than 10 seconds for the 32 kilobytes on-chip code memory.
The EPROM of the TSC87251G2D products in Window package is erasable by Ultra-
Violet radiation(1) (UV). UV erasure set all the EPROM memory cells to one and allows
reprogramming. The quartz window must be covered with an opaque label(2) when the
device is in operation. This is not so much to protect the EPROM array from inadvertent
erasure, as to protect the RAM and other on-chip logic. Allowing light to impinge on the
silicon die during device operation may cause a logical malfunction.
The TSC87251G2D products in plastic packages are One Time Programmable (OTP).
An EPROM cell cannot be reset by UV once programmed to zero.
Notes: 1. The recommended erasure procedure is exposure to ultra-violet light (at 2537 ) to
an integrated dose of at least 20 W-sec/cm2. Exposing the EPROM to an ultra-violet
lamp of 12000 μW/cm2 rating for 30 minutes should be sufficient.
2. Erasure of the EPROM begins to occur when the chip is exposed to light wavelength
shorter than 4000 . Since sunlight and fluorescent light have wavelength in this
range, exposure to these light sources over an extended time (1 week in sunlight or 3
years in room-level fluorescent lighting) could cause inadvertent erasure.
Mask ROM Devices
All the internal non-volatile memory of TSC83251G2D products is made of Mask ROM
cells. They can only be verified by the user, using the same algorithm as the
EPROM/OTPROM devices.
ROMless Devices
The TSC80251G2D products do not include on-chip Configuration Bytes, Code Memory
and Encryption Array. They only include Signature Bytes made of Mask ROM cells
which can be read using the same algorithm as the EPROM/OTPROM devices.
Security Features
In some microcontroller applications, it is desirable that the user’s program code be
secured from unauthorized access. The TSC83251G2D and TSC87251G2D offer two
kinds of protection for program code stored in the on-chip array:
Program code in the on-chip Code Memory is encrypted when read out for
verification if the Encryption Array isprogrammed.
A three-level lock bit system restricts external access to the on-chip code memory.
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