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參數資料
| 型號： | TSC87C52-12IAR |
| 英文描述： | CMOS 0 to 33 MHz Programmable 8朾it Microcontroller |
| 中文描述： | 的CMOS 0至33 MHz的可編程微控制器8朾它 |
| 文件頁數： | 13/24頁 |
| 文件大小： | 273K |
| 代理商： | TSC87C52-12IAR |
TSC87C52
13
MATRA MHS
Rev. C – 10 Sept 1997
Preliminary
Control
signals
Data In
ALE/PROG
A0–A12
Programming Cycle
1 2 3
5
4
10us
100us
D0–D7
EA/VPP
Data Out
Read/Verify Cycle
12.75V
5V
0V
Figure 9 Programming and verification signal’s waveform
Signature bytes
The
TSC87C52
has four signature bytes in location 30h, 31h, 60h and 61h. To read these bytes follow the procedure
for EPROM verify but activate the control lines provided in Table 6 for Read Signature Bytes. Table 7 shows the
content of the signature byte for the
TSC87C52
.
Table 7 Signature bytes content
Location
30h
31h
60h
61h
Contents
58h
58h
ADh
XXh
Comment
Customer selection byte: TEMIC
Family selection byte: C51
TSC87C52
Product revision number
EPROM Erasure (Windowed Packages Only)
Erasing the EPROM erases the code array and also the encryption array returning the parts to full functionality.
Erasure leaves all the EPROM cells in a 1’s state.
Erasure Characteristics
The recommended erasure procedure is exposure to ultraviolet light (at 2537 ) to an integrated dose at least 15
W–sec/cm
2
. Exposing the EPROM to an ultraviolet lamp of 12,000
μ
W/cm
2
rating for 30 minutes, at a distance of
about 25 mm, should be sufficient.
Erasure of the EPROM begins to occur when the chip is exposed to light with wavelength shorter than approximately
4,000 . Since sunlight and fluorescent lighting have wavelengths in this range, exposure to these light sources over
an extended time (about 1 week in sunlight, or 3 years in room–level fluorescent lighting) could cause inadvertent
erasure. If an application subjects the device to this type of exposure, it is suggested that an opaque label be placed
over the window.
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