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參數(shù)資料
| 型號： | TSDF53030X |
| 英文描述： | Amplifier. Other |
| 中文描述： | 放大器。其他 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | TSDF53030X |
TSDF53030X/TSDF53030XR
Vishay Semiconductors
www.vishay.com
2 (4)
Rev. 1, 12 Nov–01
Document Number 85086
All of following data and characteristics are valid for operating either
amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)
Absolute Maximum Ratings
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Test Conditions
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
T
amb
60
°
C
Channel temperature
Storage temperature range
Symbol
V
DS
I
D
±
I
G1/G2SM
±
V
G1/G2SM
P
tot
T
Ch
T
stg
Value
8
30
10
6
200
150
Unit
V
mA
mA
V
mW
°
C
°
C
–55 to +150
Maximum Thermal Resistance
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Channel ambient
on glass fibre printed board (25 x 20 x 1.5) mm
3
plated with 35
μ
m Cu
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
Electrical DC Characteristics
T
amb
= 25
°
C,
unless otherwise specified
Parameter
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
Gate 1 source
leakage current
Gate 2 - source
leakage current
Drain current
Self-biased
operating current
Gate 2 - source
cut-off voltage
Test Conditions
Symbol
±
V
(BR)G1SS
Min.
7
Typ.
Max.
10
Unit
V
±
I
G1S
= 10 mA, V
G2S
= V
DS
= 0
±
I
G2S
= 10 mA, V
G1S
= V
DS
= 0
±
V
(BR)G2SS
7
10
V
+V
G1S
= 5 V, V
G2S
= V
DS
= 0
–V
G1S
= 5 V, V
G2S
= V
DS
= 0
±
V
G2S
= 5 V, V
G1S
= V
DS
= 0
+I
G1SS
–I
G1SS
±
I
G2SS
50
100
20
μ
A
μ
A
nA
V
DS
= 5 V, V
G1S
= 0, V
G2S
= 4 V
V
DS
= 5 V, V
G1S
= nc, V
G2S
= 4 V
I
DSS
I
DSP
50
8
250
20
μ
A
mA
14
V
DS
= 5 V, V
G1S
= nc, I
D
= 20
μ
A
V
G2S(OFF)
0.8
1.0
1.4
V
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