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參數(shù)資料
| 型號： | TSHG6200 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電檢測器 |
| 英文描述： | Infrared LED, 5 mm, 1 ELEMENT, INFRARED LED, 850 nm, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 中文描述： | Infrared Emitters High Speed Emitter 5V 50mW 850nm 10 Deg |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 102K |
| 代理商： | TSHG6200 |
TSHG6200
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 24-Aug-11
1
Document Number: 81078
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
High Speed Infrared Emitting Diode, 850 nm,
GaAlAs Double Hetero
DESCRIPTION
TSHG6200 is an infrared, 850 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 5
Peak wavelength:
λ
p
= 850 nm
High reliability
High radiant power
High radiant intensity
Angle of half intensity:
= ± 10°
Low forward voltage
Suitable for high pulse current operation
High modulation bandwidth: f
c
= 18 MHz
Good spectral matching with CMOS cameras
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Infrared radiation source for operation with CMOS
cameras
High speed IR data transmission
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8389
PRODUCT SUMMARY
COMPONENT
TSHG6200
I
e
(mW/sr)
180
(deg)
± 10
λ
p
(nm)
850
tr (ns)
20
ORDERING INFORMATION
ORDERING CODE
TSHG6200
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 4000 pcs, 4000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
t
p
/T = 0.5, t
p
= 100 μs
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm,
soldered on PCB
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
VALUE
5
100
200
1
180
100
- 40 to + 85
- 40 to + 100
260
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
t
p
= 100 μs
Thermal resistance junction/ambient
R
thJA
230
K/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSHG6200 | 制造商:Vishay Semiconductors 功能描述:IR Emitting Diode |
| TSHG6200_07 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero |
| TSHG6200_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero |
| TSHG6210 | 功能描述:紅外發(fā)射源 High Speed Emitter 5V 55mW 850nm 10 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSHG6210_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero |
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