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參數(shù)資料
| 型號： | TSHG6400 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光電檢測器 |
| 英文描述： | Infrared LED, 5 mm, 1 ELEMENT, INFRARED LED, 850 nm, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 中文描述： | Infrared Emitters High Speed Emitter 5V 50mW 850nm 22 Deg |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 98K |
| 代理商： | TSHG6400 |
TSHG6400
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Aug-11
2
Document Number: 84636
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
200
0
10
20
30
40
50
60
70
80
90
100
21142
T
amb
- Ambient Temperature (°C)
P
V
R
thJA
= 230 K/W
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
90 100
T
amb
- Ambient Temperature (°C)
21143
I
F
R
thJA
= 230 K/W
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
I
F
= 100 mA, t
p
= 20 ms
TEST CONDITION
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TK
φ
e
λ
p
Δλ
TK
λ
p
t
r
t
f
f
c
d
MIN.
TYP.
1.5
2.3
- 1.8
MAX.
1.8
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
MHz
mm
Forward voltage
I
F
= 1 A, t
p
= 100 μs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 μs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
Temperature coefficient of V
F
Reverse current
Junction capacitance
10
125
70
700
50
- 0.35
± 22
850
40
0.25
20
13
18
3.7
Radiant intensity
45
135
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Cut-off frequency
Virtual source diameter
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
DC
= 70 mA, I
AC
= 30 mA pp
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSHG6400_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero |
| TSHG6410 | 功能描述:紅外發(fā)射源 High Speed Emitter 5V 55mW 850nm 18 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSHG6410_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero |
| TSHG8200 | 功能描述:紅外發(fā)射源 High Speed Emitter 5V 50mW 830nm 10 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| TSHG8200_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero |
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