參數(shù)資料
型號: TSKS5412X01
英文描述: GaAs Infrared Emitting Diode in Side View Package
中文描述: 砷化鎵紅外發(fā)光二極管在側(cè)包
文件頁數(shù): 1/7頁
文件大小: 90K
代理商: TSKS5412X01
TSKS5412X01
Rev. A6, 15-Oct-98
1 (7)
GaAs Infrared Emitting Diode in Side View Package
Description
TSKS5412 is a standard GaAs infrared emitting diode in
a flat sideview molded plastic package. A small recessed
spherical lens provides an improved radiant intensity in
a low profile case. The diode is case compatible to the
TEKS5412 photodetector, allowing the user to assemble
his own optical sensor.
Features
Side view case with spherical lens
Radiation direction perpendicular to
mounting direction
Angle of half intensity
=
±
30
Peak wavelength
p
= 950 nm
Case compatible with TEKS5412
Option X01: High rel. device for advanced
applications
Fan-fold packing according to IEC 286 part 2
Packing AMMOPACK: 2,000 pcs
Ordering code number: TSKS5412X01ASZ
Visual inspection according to QSV 5610
14 354
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Test Conditions
Symbol
V
R
I
F
I
FSM
P
V
T
j
T
stg
T
stg
T
sd
R
thJA
Value
6
100
2
170
100
–40...+85
–40...+100
260
450
Unit
V
mA
A
mW
C
C
C
C
K/W
Reverse Voltage
Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
t
p
100 s
t
5 s, 2 mm from body
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