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TSL238T
HIGH-SENSITIVITY
LIGHT-TO-FREQUENCY CONVERTER
TAOS080E
JUNE 2007
2
Copyright 2007, TAOS Inc.
The
LUMENOLOGY
Company
www.taosinc.com
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
DD
(see Note 1)
Input voltage range, V
I
Output current, I
O
Short circuit of output to ground duration
Operating free-air temperature range, T
A
Storage temperature range, T
stg
Solder conditions in accordance with JEDEC, J
STD
020C
6 V
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DD
+0.3 V
±
5 mA
5 s
40
°
C to 85
°
C
40
°
C to 85
°
C
260
°
C
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to GND.
Recommended Operating Conditions
MIN
2.7
NOM
MAX
5.5
V
DD
0.5
UNIT
V
V
Supply voltage, V
DD
High-level input voltage, V
IH
Low-level input voltage, V
IL
Operating free-air temperature range, T
A
5
0.8
×
V
DD
0
V
40
70
°
C
Electrical Characteristics at V
DD
= 5 V, T
A
= 25
°
C,
λ
p = 640 nm (Note 1) (unless otherwise noted)
PARAMETER
TEST CONDITIONS
I
OH
=
1 mA
I
OL
= 1 mA
MIN
TYP
4.5
0.25
MAX
UNIT
V
V
μ
A
μ
A
mA
kHz
ppm/
°
C
%/V
V
OH
V
OL
I
IH
I
IH
I
DD
High-level output voltage
Low-level output voltage
High-level input current
Low-level input current
Supply current
Full-scale frequency (Note 2)
Temperature coefficient of output frequency
Supply-voltage sensitivity
4
0.4
10
10
10
10
E
e
= 14.7
μ
W/cm
2
T
A
= 50
°
C (Note 3)
Wavelength < 700nm, f
O
= 50 kHz
V
DD
= 5 V
±
10%
2
3
500
1000
±
200
±
0.5
k
SVS
NOTES:
1. The input irradiance is supplied with red LED light source with peak wavelength = 640 nm.
2. Full-scale frequency is the maximum frequency of the device without saturation. Higher irradiance will not result in any additional
increase of output frequency. The output frequency will remain at approximately the saturation frequency to a minimum of 1000
μ
W/sq
cm 640-nm irradiance. During production testing, devices are not tested at this very high irradiance level.
3. Measured at wafer probe using 50
°
C hot chuck.
Operating Characteristics at V
DD
= 5 V, T
A
= 25
°
C,
λ
p = 640 nm (unless otherwise noted)
PARAMETER
TEST CONDITIONS
E
e
= 14.7
μ
W/cm
2
E
e
= 0
μ
W/cm
2
E
e
= 0
μ
W/cm
2
, TA = 50
°
C (Note 1)
MIN
40
TYP
50
MAX
UNIT
kHz
f
O
Output frequency
60
f
D
Dark frequency
0
0
0.3
Hz
Hz
6
R
e
Irradiance responsivity
3.4
kHz/(
μ
W/
cm
2
)
λ
p
Peak response wavelength
700
nm
Nonlinearity (Note 2)
NOTES:
1. Measured at wafer probe using 50
°
C hot chuck.
2. Nonlinearity is defined as the deviation from a straight line between zero and maximum of stated range, expressed as a percent
of stated range.
f
O
= 0 kHz to 10 kHz
±
1%
%F.S.