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| 型號(hào)： | TSL257SM-LF |
| 廠商： | TAOS Inc. |
| 英文描述： | HIGH-SENSITIVITY LIGHT-TO-VOLTAGE CONVERTER |
| 中文描述： | 高靈敏度光到電壓轉(zhuǎn)換器 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | TSL257SM-LF |
TSL257
HIGH-SENSITIVITY
LIGHT-TO-VOLTAGE CONVERTER
TAOS023E
SEPTEMBER 2007
2
Copyright 2007, TAOS Inc.
The
LUMENOLOGY
Company
www.taosinc.com
Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
DD
(see Note 1)
Output current, I
O
Duration of short-circuit current at (or below) 25
°
C
Operating free-air temperature range, T
A
Storage temperature range, T
stg
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (S Package)
Reflow solder, in accordance with J-STD-020C or J-STD-020D (SM Package)
6 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±
10 mA
5 s
25
°
C to 85
°
C
25
°
C to 85
°
C
260
°
C
260
°
C
. . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltages are with respect to GND.
Recommended Operating Conditions
MIN
2.7
MAX
5.5
UNIT
V
°
C
Supply voltage, V
DD
Operating free-air temperature, T
A
0
70
Electrical Characteristics at V
DD
= 5 V, T
A
= 25
°
C,
λ
p
= 470 nm, R
L
= 10 k
Ω
(unless otherwise noted)
(see Notes 2 and 3)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
mV
V
D
Dark voltage
E
e
= 0
V
DD
= 4.5 V,
V
DD
= 4.5 V,
E
e
= 1.54
μ
W/cm
2
,
λ
p
= 470 nm, Note 5
T
A
= 0
°
C to 70
°
C
λ
p
= 428 nm, see Notes 4 and 8
λ
p
= 470 nm, see Notes 5 and 8
λ
p
= 565 nm, see Notes 6 and 8
λ
p
= 645 nm, see Notes 7 and 8
f
ac
= 100 Hz, see Note 9
f
ac
= 1 kHz, see Note 9
E
e
= 1.54
μ
W/cm
2
,
λ
p
= 470 nm, Note 5
0
15
V
OM
Maximum output voltage swing
No Load
R
L
= 10 k
Ω
4.49
4.2
V
4
V
O
α
VD
Output voltage
Temperature coefficient of dark voltage (V
D
)
1.6
2
2.4
V
15
1.18
1.30
1.58
1.68
55
35
1.9
μ
V/
°
C
N
e
Irradiance responsivity
V/( W/cm
2
)
PSRR
Power supply rejection ratio
pp y
dB
dB
mA
I
DD
NOTES:
Supply current
3.5
2. Measured with R
L
= 10 k
Ω
between output and ground.
3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.
4. The input irradiance is supplied by a GaN/SiC light-emitting diode with the following characteristics: peak wavelength
λ
p
= 428 nm,
spectral halfwidth
Δλ
= 65 nm.
5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength
λ
p
= 470 nm,
spectral halfwidth
Δλ
= 35 nm.
6. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength
λ
p
= 565 nm,
spectral halfwidth
Δλ
= 28 nm.
7. The input irradiance is supplied by an AlGaAs light-emitting diode with the following characteristics: peak wavelength
λ
p
= 645 nm,
spectral halfwidth
Δλ
= 25 nm.
8. Irradiance responsivity is characterized over the range V
O
= 0.1 V to 4.5 V. The best-fit straight line of Output Voltage V
O
versus
Irradiance E
e
over this range will typically have a positive extrapolated V
O
value for E
e
= 0.
9. Power supply rejection ratio PSRR is defined as 20 log (
Δ
V
DD
(f)/
Δ
V
O
(f)) with V
DD
(f = 0) = 5 V and V
O
(f = 0) = 2 V.
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