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參數(shù)資料
| 型號(hào)： | TSLG257S |
| 廠商： | TAOS Inc. |
| 英文描述： | HIGH々SENSITIVITY COLOR LIGHT々TO々VOLTAGE CONVERTERS |
| 中文描述： | 高靈敏度的色光々 々給々電壓轉(zhuǎn)換器 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 116K |
| 代理商： | TSLG257S |
TSLB257, TSLG257, TSLR257
HIGH-SENSITIVITY COLOR
LIGHT-TO-VOLTAGE CONVERTERS
TAOS027C JUNE 2006
3
The LUMENOLOGY
Company
Copyright 2006, TAOS Inc.
www.taosinc.com
Electrical Characteristics at V
DD
= 5 V, T
A
= 25
°
C, R
L
= 10 k
(unless otherwise noted) (see Notes
2 and 3)
PARAMETER
TEST CONDITIONS
TSLB257
TYP
TSLG257
TYP
TSLR257
TYP
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
V
D
Dark voltage
E
e
= 0
V
DD
= 4.5 V, No Load
V
DD
= 4.5 V, R
L
= 10 k
E
e
= 1.7
μ
W/cm
2
,
λ
p
= 470 nm, Note 4
E
e
= 1.6
μ
W/cm
2
,
λ
p
= 524 nm, Note 5
E
e
= 1.1
μ
W/cm
2
,
λ
p
= 635 nm, Note 6
0
15
0
15
0
15
mV
V
OM
Maximum output voltage
Maximum out ut voltage
swing
4.49
4.49
4.49
V
4
4.2
4
4.2
4
4.2
1.3
2
2.7
V
O
Output voltage
1.3
2
2.7
V
1.3
2
2.7
α
VD
Temperature coefficient
of dark voltage (V
D
)
T
A
= 0
°
C to 70
°
C
15
15
15
μ
V/
°
C
λ
p
= 470 nm,
see Notes 4 and 7
1.18
0.35
0.09
R
e
Irradiance responsivity
λ
p
= 524 nm,
see Notes 5 and 7
0.53
1.25
0.14
V/
(
μ
W/
cm
2
)
λ
p
=565 nm,
see Notes 7 and 8
0.09
1.17
0.36
λ
p
= 635 nm,
see Notes 6 and 7
0.05
0.14
1.82
λ
p
= 470 nm,
see Notes 4 and 7
1.57
0.47
0.12
R
V
Illuminance responsivity
λ
p
= 524 nm,
see Notes 5 and 7
0.10
0.24
0.027
V/Ix
λ
p
= 565 nm,
see Notes 7 and 8
0.015
0.20
0.06
λ
p
= 635 nm,
see Notes 6 and 7
0.033
0.093
1.21
PSRR
Power supply rejection
ratio
f
ac
= 100 Hz, see Note 10
f
ac
= 1 kHz, see Note 10
V
O
= 2 V (typical)
55
55
55
dB
35
35
35
I
DD
Supply current
1.9
3.5
1.9
3.5
1.9
3.5
mA
NOTES:
2. Measured with R
L
= 10 k
between output and ground.
3. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.
4. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength
λ
p
= 470 nm,
spectral halfwidth
λ
= 35 nm, luminous efficacy = 75 lm/W.
5. The input irradiance is supplied by an InGaN light-emitting diode with the following characteristics: peak wavelength
λ
p
= 524 nm,
spectral halfwidth
λ
= 47 nm, luminous efficacy = 520 lm/W.
6. The input irradiance is supplied by an Al
I
nGaP light-emitting diode with the following characteristics: peak wavelength
λ
p
= 635 nm,
spectral halfwidth
λ
= 17 nm, luminous efficacy = 150 lm/W.
7. Responsivity is characterized over the range V
O
= 0.1 V to 4.5 V. The best-fit straight line of Output Voltage V
O
versus Irradiance
E
e
over this range will typically have a positive extrapolated V
O
value for E
e
= 0.
8. The input irradiance is supplied by a GaP light-emitting diode with the following characteristics: peak wavelength
λ
p
= 565 nm,
spectral halfwidth
λ
= 28 nm, luminous efficacy = 595 lm/W.
9. Illuminance responsivity R
V
is calculated from the irradiance responsivity by using the LED luminous efficacy values stated in Notes
4, 5, 6, and 8, and using 1 lx = 1 lm/m
2
.
10. Power supply rejection ratio PSRR is defined as 20 log (
V
DD
(f)/
V
O
(f)) with V
DD
(f = 0) = 5 V and V
O
(f = 0) = 2 V.
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