參數(shù)資料
型號： TSM12N02_07
廠商： Taiwan Semiconductor Co., Ltd.
英文描述： 20V N-Channel MOSFET
中文描述： 20V的N溝道MOSFET
文件頁數(shù)： 1/6頁
文件大?。?/td> 293K
代理商： TSM12N02_07
TSM12N02
20V N-Channel MOSFET
1/6
Version: A07
TO-252
R
DS(on)
(m
Ω
)
Features
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
TSM12N02CP RO
Package
TO-252
Packing
T&R
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Pulsed Drain Current, V
GS
@4.5V
Continuous Source Current (Diode Conduction)
a,b
Symbol
V
DS
V
GS
I
D
I
DM
I
S
Limit
Unit
V
V
A
A
A
20
±12
12
30
1.7
60
23
Ta = 25
o
C
Ta = 70
o
C
Maximum Power Dissipation
P
D
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
J
+150
o
C
o
C
T
J
, T
STG
-55 to +150
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
a. Maximum DC current limited by the package
b. Surface Mounted on 1” x 1” FR4 Board, t
≤
10 sec.
Symbol
T
L
R
JC
R
JA
Limit
10
2.2
50
Unit
S
o
C/W
o
C/W
PRODUCT SUMMARY
V
DS
(V)
I
D
(A)
30 @ V
GS
= 10V
8
20
40 @ V
GS
= 4.5V
6
Pin Definition:
1. Gate
2. Drain
3. Source
Block Diagram
N-Channel MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TSM12N02CP 功能描述:MOSFET 20V 12A 60W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TSM12N02CP R0 制造商:SKMI/Taiwan 功能描述:TO-252;20V 12AMP N CHANEL MOSF
TSM12N10CP ROG 功能描述:MOSFET 100V 12A P Channel Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
TSM12N65 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:650V N-Channel Power MOSFET
TSM12N65CI C0 功能描述:MOSFET 650V 6A N Channel Power Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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