參數(shù)資料
型號: TSM1N60SCTA3
廠商: Taiwan Semiconductor Co., Ltd.
英文描述: N-Channel Power Enhancement Mode MOSFET
中文描述: N溝道功率增強型MOS管
文件頁數(shù): 1/4頁
文件大?。?/td> 173K
代理商: TSM1N60SCTA3
TSM1N60S
1-4
2006/01 rev. A
TSM1N60S
N-Channel Power Enhancement Mode MOSFET
V
DS
= 600V
I
D
= 0.3A
R
DS (on)
, Vgs @ 10V, Ids @ 0.3A = 11
General Description
The TSM1N60s is used an advanced termination scheme to provide enhanced voltage-blocking capability without
degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche
and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies and converters, these devices are
particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
Features
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
I
DSS
and V
DS(on)
specified at elevated temperature
Block Diagram
Ordering Information
Part No.
Packing
Package
TSM1N60SCT B0
Bulk Pack
TO-92
TSM1N60SCT A3
Ammo Pack
TO-92
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
GS
I
D
I
DM
P
D
600V
V
Gate-Source Voltage
± 30
V
Continuous Drain Current
0.3
A
Pulsed Drain Current
1.2
A
Ta = 25
o
C
Ta > 25
o
C
3
W
Maximum Power Dissipation
0.025
W/
o
C
o
C
o
C
Operating Junction Temperature
T
J
+150
Operating Junction and Storage Temperature Range
T
J
, T
STG
E
AS
- 55 to +150
Single Pulse Drain to Source Avalanche Energy
(V
DD
= 50V, V
GS
=10V, I
AS
=0.3A, L=115mH)
Thermal Performance
50
mJ
Parameter
Symbol
Limit
Unit
Lead Temperature (1/8” from case)
T
L
R
θ
ja
10
S
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=10sec.
50
o
C/W
Pin assignment:
1. Gate
2. Drain
3. Source
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