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參數(shù)資料
| 型號： | TSM2311CX |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 20V P-Channel Enhancement Mode MOSFET |
| 中文描述： | 20V的P溝道增強(qiáng)型MOS管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 156K |
| 代理商： | TSM2311CX |
TSM2311
2-2
2003/12 rev. B
Electrical Characteristics
Ta = 25
o
C, unless otherwise noted
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= - 250uA
BV
DSS
- 20
--
--
V
Drain-Source On-State
Resistance
V
GS
= - 4.5V, I
D
= -4.0A
R
DS(ON)
--
45
55
Drain-Source On-State
Resistance
V
GS
= - 2.5V, I
D
= -2.5A
R
DS(ON)
--
75
85
m
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= - 250uA
V
GS(TH)
- 0.45
--
--
V
Zero Gate Voltage Drain Current
V
DS
= - 16V, V
GS
= 0V
I
DSS
--
--
- 1.0
uA
Gate Body Leakage
V
GS
= ± 8V, V
DS
= 0V
I
GSS
--
--
± 100
nA
On-State Drain Current
V
DS
≧
- 10V, V
GS
= -4.5V
I
D(ON)
- 6
--
--
A
Forward Transconductance
V
DS
= - 5V, I
D
= - 4.0A
g
fs
--
9
--
S
Dynamic
Total Gate Charge
Q
g
--
8.5
12
Gate-Source Charge
Q
gs
--
1.5
--
Gate-Drain Charge
V
DS
= - 6V, I
D
= - 4.0A,
V
GS
= - 4.5V
Q
gd
--
2.1
--
nC
Turn-On Delay Time
t
d(on)
--
18
--
Turn-On Rise Time
t
r
--
45
--
Turn-Off Delay Time
t
d(off)
--
95
--
Turn-Off Fall Time
V
DD
= - 4V, R
L
= 4
,
I
D
= - 1A, V
GEN
= - 4.5V,
R
G
= 6
t
f
--
65
--
nS
Input Capacitance
C
iss
--
970
--
Output Capacitance
C
oss
--
485
--
Reverse Transfer Capacitance
V
DS
= - 6V, V
GS
= 0V,
f = 1.0MHz
C
rss
--
160
--
pF
Source-Drain Diode
Max. Diode Forward Current
I
S
--
--
- 1.6
A
Diode Forward Voltage
Note : pulse test: pulse width <=300uS, duty cycle <=2%
I
S
= - 1.6A, V
GS
= 0V
V
SD
--
- 0.8
- 1.2
V
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| TSM2311CX RF | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R 制造商:Taiwan Semiconductor 功能描述:Trans MOSFET P-CH 20V 4A 3-Pin SOT-23 T/R |
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| TSM2311CXRFG | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20V P-Channel MOSFET |
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| TSM2312_08 | 制造商:TSC 制造商全稱:Taiwan Semiconductor Company, Ltd 功能描述:20V P-Channel MOSFET |
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