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參數(shù)資料
| 型號(hào)： | TSM2N7000 |
| 廠商： | Taiwan Semiconductor Co., Ltd. |
| 英文描述： | 60V N-Channel Enhancement Mode MOSFET |
| 中文描述： | 60V的N溝道增強(qiáng)型MOS管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 123K |
| 代理商： | TSM2N7000 |
TSM2N7000
1-3
2003/12 rev. A
TSM2N7000
60V N-Channel Enhancement Mode MOSFET
V
DS
= 60V
I
D
= 200mA
R
DS (on)
, Vgs @ 10V, Ids @ 500mA = 5.0
General Description
The TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most
applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA. This product is particularly suited
for low voltage, low current application such as small servo motor control, power MOSFET gate drivers, and other
switching applications.
Features
Ordering Information
Part No.
Packing
Package
TSM2N7000CT A3
Ammo pack
TSM2N7000CT B0
Bulk pack
TO-92
Block Diagram
High density cell design for low on-resistance
Voltage control small signal switch
Rugged and reliable
High saturation current capability
Provide in TO-92 package
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
V
Drain-Gate Voltage
V
DGR
60
V
Gate-Source Voltage --- Continuous
--- Pulsed
V
GS
V
GSM
± 20
± 40
V
Continuous Drain Current
I
D
200
mA
Pulsed Drain Current
I
DM
500
mA
Ta = 25
o
C
350
mW
Maximum Power Dissipation
Ta > 25
o
C
P
D
2.8
mW/
o
C
Operating Junction Temperature
T
J
+150
o
C
Operating Junction and Storage Temperature Range
Thermal Performance
T
J
, T
STG
- 55 to +150
o
C
Parameter
Symbol
Limit
Unit
Lead Temperature (1/8” from case)
T
L
10
S
Junction to Ambient Thermal Resistance
R
θ
ja
357
o
C/W
Pin assignment:
1. Gate
2. Source
3. Drain
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TSM2N7000CTA3 | 60V N-Channel Enhancement Mode MOSFET |
| TSM2N7000CTB0 | 60V N-Channel Enhancement Mode MOSFET |
| TSM2N7002EDCU6 | 50V Dual N-Channel Enhancement Mode MOSFET |
| TSM2N7002CX | 60V N-Channel Enhancement Mode MOSFET |
| TSM2N7002 | 60V N-Channel Enhancement Mode MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSM2N7000CT | 功能描述:MOSFET 60V 0.2A 0.35W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM2N7000CT A3 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 60V 0.2A 3-Pin TO-92 Ammo |
| TSM2N7000KCT | 功能描述:MOSFET 60V 0.2Amp N channel MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| TSM2N7000KCT A3 | 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 60V 0.3A Ammo 制造商:SKMI/Taiwan 功能描述:Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Ammo |
| TSM2N7002CX | 功能描述:MOSFET 60V 0.2A 0.35W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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