參數(shù)資料
型號(hào)： TSM5518M
廠商： NXP Semiconductors N.V.
英文描述： 1.3 GHz Bidirectional IIC-bus controlled synthesizer(1.3 GHz雙向IIC總線控制的合成器)
中文描述： 1.3 GHz的雙向國(guó)際進(jìn)口控制合成巴士（1.3千兆赫雙向進(jìn)口證總線控制的合成器）
文件頁(yè)數(shù)： 7/20頁(yè)
文件大?。?/td> 161K
代理商： TSM5518M
1997 Mar 07
7
Philips Semiconductors
Product specification
1.3 GHz bidirectional I
2
C-bus controlled
synthesizer
TSA5518M
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134).
HANDLING
Every pin withstands the ESD test in accordance with MIL-STD-833C category B (2000 V).
Every pin withstands the ESD test in accordance with Philips Semiconductor machine model 0
, 200 pF.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
MAX.
UNIT
V
CC
V
i(XTAL)
V
i(SCL)
V
SDA
V
i(AS)
V
o(BS)
V
i(RF)
V
o
supply voltage
voltage at pin XTAL
voltage at pin SCL
voltage at pin SDA
voltage at pin AS
voltage at pin BS
voltage at pins RF1 and RF2
output voltage at ports P0, P2
and P6
output voltage at ports P4, P5
and P7
output voltage at pin PD
output voltage at pin UD
output current at pin SDA
output current at pins P0, P1
and P2
output current at pins P4, P5
and P7
output current at pin P6
storage temperature
maximum junction temperature
maximum short circuit time to
GND
maximum short circuit time to
V
CC
+6
+V
CC
+6
+6
+V
CC
+V
CC
+V
CC
+16
V
V
V
V
V
V
V
V
0.3
+V
CC
V
V
PD
V
UD
I
SDA
I
o
0.3
0.3
1
1
+V
CC
+V
CC
+5
+20
V
V
mA
mA
open collector
emitter follower
1
+10
mA
open collector
1
40
+10
+150
150
10
mA
°
C
°
C
s
T
stg
T
j(max)
t
sc(GND)(max)
one pin to GND (V
CC
= 5.5 V;
GND = 0 V)
one pin to V
CC
(V
CC
= 5.5 V; GND = 0 V)
t
sc(VCC)(max)
10
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
120
K/W
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