參數(shù)資料
型號： TSOP2830QJ
英文描述： TRANSISTOR-STAGE OUTPUT PHOTO IC
中文描述： 晶體管階段的輸出相片集成電路
文件頁數(shù)： 4/7頁
文件大小： 145K
代理商： TSOP2830QJ
TSOP22..KU1
Vishay Semiconductors
www.vishay.com
4 (7)
Rev. 1, 19–Nov–01
Document Number 82172
Typical Characteristics
(T
amb
= 25 C, unless otherwise specified)
0.7
0.8
0.9
1.0
1.1
E
e
f/f
0
– Relative Frequency
1.3
94 8143
0.0
0.2
0.4
0.6
0.8
1.0
e
1.2
f = f
0
f ( 3dB ) = f
0
/10
5%
Figure 1. Frequency Dependence of Responsivity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
1.0
10.0
100.0
1000.0 10000.0
E
e
– Irradiance ( mW/m
2
)
Figure 2. Sensitivity in Dark Ambient
96 12110
p
t
Input burst duration
= 950 nm,
optical test signal, fig.7
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.01
0.10
E – DC Irradiance (W/m
2
)
1.00
10.00
100.00
96 12111
e
E
2
Correlation with ambient light sources
(Disturbanceeffect):10W/m
2
(Stand.illum.A,T=2855K)
(Daylight,T=5900K)
1.4klx
8.2klx
Ambient, = 950 nm
Figure 3. Sensitivity in Bright Ambient
0.0
0.4
0.8
1.2
1.6
0.0
0.4
0.8
1.2
2.0
E – Field Strength of Disturbance ( kV/m )
Figure 4. Sensitivity vs. Electric Field Disturbances
2.0
94 8147
1.6
E
e
2
f(E)=f
0
0.01
0.1
1
10
100
0.1
1
10
1000
94 9106
V
sRMS –
AC Voltage on DC Supply Voltage (mV)
Figure 5. Sensitivity vs. Supply Voltage Disturbances
E
e
2
f = f
0
10 kHz
100 Hz
1 kHz
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
–30 –15
0
15
30
45
60
75
90
T
amb
– Ambient Temperature (
°
C )
Figure 6. Sensitivity vs. Ambient Temperature
96 12112
e
E
2
Sensitivity in dark ambient
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