參數(shù)資料
型號(hào): TSPC106AMG66CE
英文描述: MEMORY CONTROLLER
中文描述: 內(nèi)存控制器
文件頁(yè)數(shù): 20/40頁(yè)
文件大小: 569K
代理商: TSPC106AMG66CE
20
TSPC106
2102B
HIREL
02/02
Detailed
Specifications
Scope
This drawing describes the specific requirements of the TSPC106 in compliance with
MIL-STD-883 class B or manufacturer
s standard screening.
Applicable Documents
Documents applicable to the information contained in this datasheet are:
1.
MIL-STD-883: Test Methods and Procedures for Electronics
2.
MIL-PRF-38535: General Specifications for Microcircuits
Requirements
General
The microcircuits are in accordance with the applicable documents and as specified
herein.
Design and Construction
Terminal Connections
The terminal connections are as shown in
Pin Description
on page 4.
Lead Material and Finish
Lead material and finish are as specified in
Package Mechanical Data
on page 37.
Package
The macrocircuits are packaged in 303-pin ceramic ball grid array packages.
The precise package drawings are described at the end of the specification.
CBGA
Package Parameters
on page 37 and
CI_CGA Package Parameters
on page 38.
Absolute Maximum Ratings
Stresses above the absolute maximum rating may cause permanent damage to the
device. Extended operation at the maximum levels may degrade performance and affect
reliability.
Notes:
1. Functional operating conditions are given in AC and DC electrical specifications.
Stresses beyond the absolute maximums listed may affect device reliability or cause
permanent damage to the device.
2. Caution: Input voltage must not be greater than the V
DD
supply voltage by more than
2.5V at all times including during power-on reset.
Thermal Characteristics
This section provides thermal management information for the C4/CBGA package.
Proper thermal control design is primarily dependent upon the system-level design.
The use of C4 die on CBGA interconnect technology offers significant reduction in both
the signal delay and the microelectronic packaging volume. Figure 5 shows the salient
features of the C4/CBGA interconnect technology. The C4 interconnection provides
both the electrical and the mechanical connections for the die to the ceramic substrate.
Table 11.
Absolute Maximum Ratings
Symbol
Parameter
Min
Max
Unit
V
DD
Supply Voltage
-0.3
3.6
V
AV
DD
PLL Supply Voltage
-0.3
3.6
V
V
IN
Input Voltage
-0.3
5.5
V
T
STG
Storage Temperature Range
-55
+150
°
C
相關(guān)PDF資料
PDF描述
TSPC106AMG66CG MEMORY CONTROLLER
TSPC106AMG83CE MEMORY CONTROLLER
TSPC106AMG83CG MEMORY CONTROLLER
TSPC106AVG66CE MEMORY CONTROLLER
TSPC106AVG66CG MEMORY CONTROLLER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TSPC106AMG66CG 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER
TSPC106AMG83CE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER
TSPC106AMG83CG 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER
TSPC106AMGB/Q66CE 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER
TSPC106AMGB/Q66CG 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MEMORY CONTROLLER