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參數(shù)資料
| 型號(hào)： | TSSS2600 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 激光器 |
| 英文描述： | EMITTER IR MINI 950NM GAAS AXIAL |
| 中文描述： | Infrared Emitters 25 Degree 170mW 950nm |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | TSSS2600 |
TSSS2600
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 24-Aug-11
2
Document Number: 81042
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 1 - Forward Current Limit vs. Ambient Temperature
0
50
100
150
200
250
P
V
w
e
W
)
94 8029
R
thJA
T
am
b
- Am
b
ient Temperat
u
re (°C)
100
80
60
40
20
0
0
25
50
75
100
125
94 7916
R
thJA
T
am
b
- Am
b
ient Temperat
u
re (°C)
100
80
60
40
20
0
I
F
w
a
u
r
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1.5 A, t
p
= 100 μs
Temperature coefficient of V
F
Reverse current
Junction capacitance
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1.5 A, t
p
= 100 μs
Radiant power
I
F
= 100 mA, t
p
= 20 ms
Temperature coefficient of
φ
e
TEST CONDITION
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TK
φ
e
1
2
λ
p
Δλ
TK
λ
p
t
r
t
r
t
f
t
f
d
MIN.
TYP.
1.25
2.2
- 1.3
MAX.
1.6
UNIT
V
V
mV/K
μA
pF
mW/sr
mW/sr
mW
%/K
deg
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Forward voltage
I
F
= 100 mA
V
R
= 5 V
100
30
2.6
25
20
- 0.8
± 25
± 60
950
50
0.2
800
400
800
400
2
Radiant intensity
1
3
I
F
= 100 mA
horizontal
vertical
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1.5 A
I
F
= 100 mA
I
F
= 1.5 A
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
V
irtual source diameter
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相關(guān)代理商/技術(shù)參數(shù) |
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