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參數(shù)資料
| 型號： | TST0911-M |
| 廠商： | ATMEL CORP |
| 元件分類： | 放大器 |
| 英文描述： | 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | PSSOP28, 28 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 182K |
| 代理商： | TST0911-M |
TST0911
Rev. A1, 20-May-99
Preliminary Information
4 (8)
Electrical Characteristics
Test conditions: V
CC
= V
CC1
to V
CC6,
V
CC, CTL
= + 3.5 V, V
CTL
= 1.5 V, T
amb
= + 25
°
C, t
burst
= 0.577 ms,
t
period
= 4.615 ms (see application circuit)
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
Power supply
Supply voltage
Current consumption
V
CC
2.7
3.5
4.5
V
Active mode
P
out
= 34.5 dBm, PAE = 50%
P
out
= 32.5 dBm, PAE = 42%
Power–down mode
V
CTL
≤
0.2 V
I
1.7
1.13
A
A
μ
A
Current consumption
(leakage current)
900-MHz amplifier (GSM)
Frequency range
Input impedance *)
Output impedance
Output power
I
10
f
in
Z
i
Z
o
880
900
50
50
915
MHz
P
in
= 3 dBm, R
L
= RG = 50
V
CC
= 3.5 V, T
amb
= +25
°
C
V
CC
= 2.7 V, T
amb
= +85
°
C
V
CTL
= 0.3 V
P
out
34.3
32.0
34.8
33.0
– 20
0
dBm
dBm
dBm
dBm
Minimum output power
Input power
Power-added efficiency
P
out
P
in
PAE
10
V
CC
= 3 V, P
out
= 28 dBm
V
CC
= 3 V, P
out
= 30 dBm
V
CC
= 3 V, P
out
= 33.5 dBm
P
in
= 0 to 10 dBm, P
out
= 34.5 dBm
T
amb
= –25 to + 85
°
C
no spurious
≥
–60 dBc
P
out
= 34.5 dBm, all phases
25
35
50
%
Input VSWR *)
Stability
VSWR
VSWR
2 : 1
10 : 1
Load mismatch
(stable, no damage)
Second harmonic distortion
Third harmonic distortion
Noise power
VSWR
10 : 1
2fo
3fo
–35
–35
dBc
dBc
P
out
= 34 dBm, RBW = 100 kHz
f = 925 to 935 MHz
f
≥
935 MHz
P
in
= 0 to 10 dBm,
V
CTL
≤
0.2 V (power down)
DCS/PCS powered down,
P
in
= 10 dBm
see figure 3 (t.b.d.)
– 70
– 82
dBm
dBm
dB
Isolation between input
and output
Isolation between GSM in-
put and DCS/PCS output
Control curve
Rise and fall time
Output power versus input
power
Power control range
Control voltage range
Control current, assuming
that only GSM amplifier at
a time is turned on
50
50
dB
t
r
, t
f
0.5
μ
s
see figure 1 (t.b.d.)
60
0.5
dB
V
V
CTL
2.5
P
in
= 0 to 10 dBm,
V
CTL
= 0 to 2.0 V
I
CTL
200
μ
A
*)
with external matching (see application circuit)
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