參數(shù)資料
型號： TSUS3400
廠商： VISHAY SEMICONDUCTORS
元件分類： 激光器
英文描述： TSUS3400 - Infrared Emitting Diode, 950 nm, GaAs
中文描述： Infrared Emitters IR Emitting Diode
文件頁數(shù)： 1/5頁
文件大?。?/td> 103K
代理商： TSUS3400
TSUS3400
www.vishay.com
Vishay Semiconductors
Rev. 1.5, 25-Aug-11
1
Document Number: 81051
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Infrared Emitting Diode, 950 nm, GaAs
DESCRIPTION
TSUS3400 is an infrared, 950 nm emitting diode in GaAs
technology, molded in a clear, blue tinted plastic package.
FEATURES
Package type: leaded
Package form: T-1
Dimensions (in mm): 3
Peak wavelength:
λ
p
= 950 nm
High reliability
Angle of half intensity:
= ± 18°
Low forward voltage
Radiant power: 20 mW at I
F
= 100 mA
Suitable for DC and high pulse current operation
Good spectral matching with Si photodetectors
Compliant to RoHS Directive 2002/95/EC and in
accordance with WEEE 2002/96/EC
Note
**
Please see document “Vishay Material Category Policy”:
www.vishay.com/doc99902
APPLICATIONS
Infrared source in photo interrupters, reflective and
transmissive sensors
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
22592
PRODUCT SUMMARY
COMPONENT
TSUS3400
I
e
(mW/sr)
15
(deg)
± 18
λ
p
(nm)
950
t
r
(ns)
800
ORDERING INFORMATION
ORDERING CODE
TSUS3400
PACKAGING
Bulk
REMARKS
PACKAGE FORM
T-1
MOQ: 5000 pcs, 5000 pcs/bulk
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
t
p
/T = 0.5, t
p
= 100 μs
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t
≤
5 s, 2 mm from case
Thermal resistance junction/ambient
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
2
170
100
- 40 to + 100
- 40 to + 100
260
450
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
t
p
= 100 μs
相關(guān)PDF資料
PDF描述
TSUS4300 LED IrLED 950nm 2-Pin T-1
TSUS4400 LED IrLED 950nm 2-Pin T-1 Bulk
TSUS5202 LED IrLED 950nm 2-Pin T-1 3/4
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TSUS5201 TSUS5200, TSUS5201, TSUS5202 - Infrared Emitting Diode, 950 nm, GaAs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TSUS3410 功能描述:紅外發(fā)射源 IR EMITTER STD 950NM 3MM PCKG- RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
TSUS4300 功能描述:紅外發(fā)射源 5V 20mW 950nm 16 Deg RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
TSUS4300 制造商:Vishay Intertechnologies 功能描述:IR EMITTER 3MM 950NM
TSUS4300_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
TSUS4400 功能描述:紅外發(fā)射源 18 Degree 170mW 950nm RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk
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