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參數(shù)資料
| 型號(hào)： | TSUS5400 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 激光器 |
| 英文描述： | LED IrLED 950nm 2-Pin T-1 3/4 |
| 中文描述： | Infrared Emitters 22 Degree 210mW |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 101K |
| 代理商： | TSUS5400 |
TSUS5400, TSUS5401, TSUS5402
Vishay Semiconductors
www.vishay.com
Rev. 1.8, 24-Aug-11
2
Document Number: 81056
For technical questions, contact:
emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0
10
20
30
40
50
60
70
80
90
100
21313
T
am
b
- Am
b
ient Temperat
u
re (°C)
P
V
w
e
W
)
R
thJA
= 230 K/
W
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
80
90 100
T
am
b
- Am
b
ient Temperat
u
re (°C)
21314
I
F
w
a
u
r
R
thJA
= 230 K/
W
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
I
F
= 100 mA, t
p
= 20 ms
Temperature coefficient of V
F
Reverse current
Junction capacitance
V
R
= 0 V, f = 1 MHz, E = 0
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
TEST CONDITION
SYMBOL
V
F
TK
VF
I
R
C
j
TK
φ
e
λ
p
Δλ
TK
λ
p
t
r
t
r
t
f
t
f
d
MIN.
TYP.
1.3
- 1.3
MAX.
1.7
UNIT
V
mV/K
μA
pF
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
I
F
= 100 mA
V
R
= 5 V
100
30
- 0.8
± 22
950
50
0.2
800
400
800
400
2.9
I
F
= 20 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1.5 A
I
F
= 100 mA
I
F
= 1.5 A
Rise time
Fall time
V
irtual source diameter
TYPE DEDICATED CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
TSUS5400
TSUS5401
TSUS5402
TSUS5400
TSUS5401
TSUS5402
TSUS5400
TSUS5401
TSUS5402
TSUS5400
TSUS5401
TSUS5402
SYMBOL
V
F
V
F
V
F
I
e
I
e
I
e
I
e
I
e
I
e
φ
e
φ
e
φ
e
MIN.
TYP.
2.2
2.2
2.2
14
17
20
140
160
190
13
14
15
MAX.
3.4
3.4
2.7
35
35
35
UNIT
V
V
V
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW/sr
mW
mW
mW
Forward voltage
I
F
= 1.5 A, t
p
= 100 μs
Radiant intensity
I
F
= 100 mA, t
p
= 20 ms
7
10
15
60
85
120
I
F
= 1.5 A, t
p
= 100 μs
Radiant power
I
F
= 100 mA, t
p
= 20 ms
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TSUS5401 | TSUS5400, TSUS5401, TSUS5402 - Infrared Emitting Diode, 950 nm, GaAs |
| U3825DW | High Speed PWM Controller |
| U3825J | High Speed PWM Controller |
| U3825L | High Speed PWM Controller |
| U3825N | High Speed PWM Controller |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TSUS5400 | 制造商:Vishay Intertechnologies 功能描述:IR EMITTER 5MM 950NM |
| TSUS5400_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs |
| TSUS5400_09 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Infrared Emitting Diode, 950 nm, GaAs |
| TSUS5400-AS12 | 制造商:Vishay Semiconductors 功能描述:STANDARD IR EM - 5MM - Tape and Reel |
| TSUS5401 | 功能描述:紅外發(fā)射源 22 Degree 210mW 950nm RoHS:否 制造商:Fairchild Semiconductor 波長(zhǎng):880 nm 射束角:+/- 25 輻射強(qiáng)度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
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