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參數(shù)資料
| 型號： | TSXPC603RMG10LC |
| 英文描述： | MICROPROCESSOR|32-BIT|CMOS|BGA|255PIN|CERAMIC |
| 中文描述： | 微處理器| 32位|的CMOS | BGA封裝| 255PIN |陶瓷 |
| 文件頁數(shù)： | 16/42頁 |
| 文件大小： | 961K |
| 代理商： | TSXPC603RMG10LC |
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16
TSPC603R
2125A–12/01
Marking
The document where are defined the marking are identified in the related reference docu-
ments. Each microcircuit are legible and permanently marked with the following information as
minimum:
ATMEL logo,
Manufacturer’s part number,
Class B identification if applicable,
Date-code of inspection lot,
ESD identifier if available,
Country of manufacturing.
Electrical
Characteristics
General Requirements
All static and dynamic electrical characteristics specified for inspection purposes and the rele-
vant measurement conditions are given below:
Table 9: Static electrical characteristics for the electrical variants.
Table 10: Dynamic electrical characteristics for the 603r.
These specifications are for 166 MHz to 300 MHz processor core frequencies. The processor
core frequency is determined by the bus (SYSCLK) frequency and the settings of the
PLL_CFG0 to PLL_CFG3 signals. All timings are specified respective to the rise edge of
SYSCLK.
Static Characteristics
Notes:
1. Excludes test signals (LSSD_MODE, L1_TSTCLK, L2_TSTCLK, and JTAG signals).
2. Capacitance is periodically sampled rather than 100% tested.
3. Leakage currents are measured for nominal OV
dd
and V
dd
or both OV
dd
and V
dd
. Same variation (for example, both V
dd
and
OV
dd
vary by either +5% or -5%).
Table 9.
Electrical Characteristics
V
dd
= A
V
dd
= 2.5V ± 5%; O
V
dd
= 3.3 ± 5%V dc, GND = 0V dc, -55°C
≤
TC
≤
125°C
Characteristics
Symbol
Min
Max
Unit
Input High Voltage (all inputs except SYSCLK)
V
IH
2.0
5.5
V
Input Low Voltage (all inputs except SYSCLK)
V
IL
GND
0.8
V
SYSCLK Input High Voltage
CV
IH
2.4
5.5
V
SYSCLK Input Low Voltage
CV
IL
GND
0.4
V
Input Leakage Current
V
in
= 3.465V
(1)(3)
V
in
= 5.5V
(1)(3)
V
in
= 3.465V
(1)(3)
V
in
= 5.5V
(1)(3)
I
in
-
30
μA
I
in
-
300
μA
Hi-Z (off-state)
Leakage Current
I
TSI
-
30
μA
I
TSI
-
300
μA
Output High Voltage
I
OH
= -7 mA
V
OH
2.4
-
V
Output Low Voltage
I
OL
= +7 mA
V
OL
-
0.4
V
Capacitance, V
in
= 0V, f = 1 MHz
(2)
(excludes TS, ABB, DBB, and ARTRY)
C
in
-
10.0
pF
Capacitance, V
in
= 0V, f = 1 MHz
(2)
(for TS, ABB, DBB, and ARTRY)
C
in
-
15.0
pF
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