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參數(shù)資料
| 型號： | TT285N |
| 英文描述： | SCR / Diode Modules |
| 中文描述： | SCR /二極管模塊 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 399K |
| 代理商： | TT285N |
N
Netz-Thyristor-Modul
Phase Control Thyristor
Module
Datenblatt / Data sheet
TT285N
BIP AC / SDB-MA/19.08.96 A.Rüther
A 126/96
1/12
Seite/page
Kenndaten
Hchstzulssige Werte / Maximum rated values
Periodische Vorwrts- und Rückwrts-Spitzensperrspannung
repetitive peak forward off-state and reverse voltages
TT285N
TD285N
DT285N
Elektrische Eigenschaften / Electrical properties
T
vj
= -40°C... T
vj max
V
DRM
,V
RRM
1200
1400
1600
V
V
Vorwrts-Stospitzensperrspannung
non-repetitive peak forward off-state voltage
T
vj
= -40°C... T
vj max
V
DSM
1200
1400
1600
V
V
Rückwrts-Stospitzensperrspannung
non-repetitive peak reverse voltage
T
vj
= +25°C... T
vj max
V
RSM
1300
1500
1700
V
V
Durchlastrom-Grenzeffektivwert
maximum RMS on-state current
I
TRMSM
450 A
Dauergrenzstrom
average on-state current
T
C
= 92°C
I
TAVM
285 A
Stostrom-Grenzwert
surge current
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
I
TSM
9100
8000
A
A
Grenzlastintegral
I2t-value
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/μs
I2t
414000
320000
A2s
A2s
Kritische Stromsteilheit
critical rate of rise of on-state current
(di
T
/dt)
cr
250 A/μs
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
6.Kennbuchstabe / 6
th
letter F
(dv
D
/dt)
cr
1000 V/μs
Charakteristische Werte / Characteristic values
Durchlaspannung
on-state voltage
T
vj
= T
vj max
, i
T
= 800 A
v
T
max.
1,48 V
Schleusenspannung
threshold voltage
T
vj
= T
vj max
V
(TO)
0,8 V
Ersatzwiderstand
slope resistance
T
vj
= T
vj max
r
T
0,65 m
Zündstrom
gate trigger current
T
vj
= 25°C, v
D
= 6 V
I
GT
max.
200 mA
Zündspannung
gate trigger voltage
T
vj
= 25°C, v
D
= 6 V
V
GT
max.
2 V
Nicht zündender Steuerstrom
gate non-trigger current
T
vj
= T
vj max
, v
D
= 6 V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
I
GD
max.
max.
10
5
mA
mA
Nicht zündende Steuerspannung
gate non-trigger voltage
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
V
GD
max.
0,2 V
Haltestrom
holding current
T
vj
= 25°C, v
D
= 6 V, R
A
= 5
I
H
max.
300 mA
Einraststrom
latching current
T
vj
= 25°C, v
D
= 6 V, R
GK
≥
10
i
GM
= 1 A, di
G
/dt = 1 A/μs, t
g
= 20 μs
I
L
max.
1200 mA
Vorwrts- und Rückwrts-Sperrstrom
forward off-state and reverse current
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
i
D
, i
R
max.
70 mA
Zündverzug
gate controlled delay time
DIN IEC 747-6
T
vj
= 25 °C,i
GM
= 1 A, di
G
/dt = 1 A/μs
t
gd
max.
3 μs
prepared by: C.Drilling
date of publication:
24.09.02
approved by: J. Novotny
revision:
1
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