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參數(shù)資料
| 型號： | TV1824FMR |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 200 A, 2400 V, SILICON, RECTIFIER DIODE, DO-9 |
| 封裝： | DO-9, 2 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 97K |
| 代理商： | TV1824FMR |
2/6
www.dynexsemi.com
TV18..F
SURGE RATINGS
Conditions
Max.
Units
3.5
kA
61 x 10
3
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
Parameter
Symbol
10ms half sine; with 0% V
RRM,
T
j
= 150
o
C
2.8
kA
39.2x 10
3
A
2
s
I
2
t for fusing
I
2
t
Surge (non-repetitive) forward current
I
FSM
10ms half sine; with 50% V
RRM,
T
j
= 150
o
C
THERMAL AND MECHANICAL DATA
dc
Conditions
Max.
Units
o
C/W
-
0.06
Thermal resistance - case to heatsink
R
th(c-h)
Thermal resistance - junction to case
R
th(j-c)
Mounting torque 35.0Nm
with mounting compound
Symbol
Parameter
-
0.16
o
C/W
Min.
t
rr
50
Symbol
Typ.
Units
Parameter
V
FM
Forward voltage
I
RRM
Peak reverse current
Reverse recovery time
Q
RA1
Recovered charge (50% chord)
I
RM
Reverse recovery current
K
Soft factor
V
TO
Threshold voltage
r
T
Slope resistance
V
FRM
Forward recovery voltage
di/dt = 1000A/
μ
s, T
j
= 125
o
C
-
120
V
At T
vj
= 150
o
C
-
1.54
m
At T
vj
= 150
o
C
-
1.64
V
1.3
-
-
-
160
A
-
240
μ
C
-
3.2
μ
s
At V
RRM
, T
case
= 150
o
C
-
mA
At 1000A peak, T
case
= 25
o
C
-
3.1
V
Conditions
Max.
I
F
= 1000A, di
RR
/dt = 100A/
μ
s
T
case
= 150
o
C, V
R
= 100V
CHARACTERISTICS
T
stg
Storage temperature range
-55
175
o
C
Nm
35.0
30.0
Mounting torque
-
T
vj
Virtual junction temperature
On-state (conducting)
-
150
o
C
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