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參數(shù)資料
| 型號： | TVB200SA |
| 英文描述： | PolySwitch SiBar Thyristor Surge Protectors |
| 中文描述： | 的PolySwitch SiBar晶閘管浪涌保護(hù)器 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 35K |
| 代理商： | TVB200SA |
Tyco/Electronics
Raychem Corporation
308 Constitution Drive
Menlo Park, CA 94025
800-227-4856
FAX 800-227-4866
PolySwitch
SiBar
Thyristor Surge Protectors
PRODUCT: TVB200SA
DOCUMENT: 24304
PCN: 732781
REV LETTER: B
REV DATE: AUGUST 16, 2001
PAGE NO.: 2 OF 2
DEVICE RATINGS @ 25o C (Both Polarities)
Parameter
Symbol
V
DM
I
PP
1
I
PP
2
I
PP
3
Value
200
50
70
100
Units
Off-State Voltage, Maximum at
I
D = 5 μA
Non-Repetitive Peak Impulse Current 10x1000 μsec
Double exponential waveform (Notes 1 and 2) 10/560 μsec
V
A
A
A
10/160 μsec
Critical Rate of Rise of On-State Current
Maximum 2x10 μsec waveform,
V
OC=2.5kV,
I
SC=500A peak
di/dt
150
A/μs
DEVICE THERMAL RATINGS
Storage Temperature Range
Operating Temperature Range
Blocking or conducting state
Overload Junction Temperature
Maximum; Conducting state only
ELECTRICAL CHARACTERISTICS Both polarities (T
J
@ 25oC unless otherwise noted)
Characteristics
Breakover Voltage (+25oC)
d
V
/dt = 100V/μsec,
I
SC
=1.0A,
V
DC
= 1000V
T
STG
T
A
-65 to 150
-40 to 125
oC
oC
T
J
+175
oC
Symbol
V
BO
Min
----
Typ
260
Max
320
Units
V
Breakover Voltage (+25oC)
f=60Hz,
I
SC
=1.0Arms,
V
OC
= 1000Vrms,
R=1.0 k
, t = 0.5 cycle (Note 2)
Breakover Voltage Temperature Coefficient
Off-State Current (
V
D1= 50V)
V
BO
----
260
320
V
d
V
BO/d
T
J
I
D1
I
D2
V
T
----
----
----
----
0.08
-----
-----
-----
-----
2.0
5.0
5.0
%/oC
μA
μA
V
(
V
D2=
V
DM)
On-State Voltage (
I
T=1A)
PW
≤
300 μsec, Duty Cycle
≤
2% (Note 2)
Breakover Current
Holding Current (Note 2)
Critical Rate of Rise of Off-State Voltage
(Linear waveform,
V
D
= 0.8 X Rated
V
BO,
T
J
= +25oC)
Capacitance (f=1.0 Mhz, 50V
DC
bias, 1 Vrms)
(f=1.0 Mhz, 2V
DC
bias, 15mVrms)
I
BO
I
H
dv/dt
----
175
2000
230
350
----
-----
----
----
mA
mA
V/μs
C
1
C
2
----
----
20
50
----
pF
pF
Note 1. Allow cooling before test second polarity
Note 2. Measured under pulse conditions to reduce heating
VOLTAGE-CURRENT CHARACTERISTIC
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TVB200SA_04 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Thyristor Surge Protectors |
| TVB200SA-L | 功能描述:硅對稱二端開關(guān)元件 SiBar Thyristor 200V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TVB200SB-L | 功能描述:硅對稱二端開關(guān)元件 SiBar Thyristor 200V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TVB200SC | 功能描述:硅對稱二端開關(guān)元件 SiBar Thyristor 200V RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| TVB200SC_04 | 制造商:MA-COM 制造商全稱:M/A-COM Technology Solutions, Inc. 功能描述:Thyristor Surge Protectors |
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