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參數(shù)資料
| 型號： | TVU150 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射頻功率晶體管(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 18K |
| 代理商： | TVU150 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 100 mA
BV
CER
I
C
= 100 mA R
BE
= 200
BV
CES
I
C
= 50 mA
BV
EBO
I
E
= 10 mA
I
CES
V
CE
= 30 V
h
FE
V
CE
= 5.0 V I
C
= 1.0 A
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
26
30
35
40
60
80
3.5
4.0
30
45
UNITS
V
V
V
V
mA
---
10
120
C
OB
V
CB
= 26 V
f = 1.0 MHz
75
pF
P
G
IMD
1
Load
Mismatch
V
CC
= 26 V I
CQ
= 2 X 3000 mA f = 860 MHz 11
P
OUT
= 40 W
V
CC
= 26 V I
CQ
= 2 X 150 mA P
OUT
= 150 W
PEP
VSWR = 5:1 @ all phase angles
-52
9.0
dB
dBc
No Degradation in Output
Power
NPN SILICON RF POWER TRANSISTOR
TVU150
DESCRIPTION:
The
ASI TVU150
is Designed for
FEATURES:
Input Matching Network
Omnigold
Metalization System
MAXIMUM RATINGS
I
C
25 A
V
CEO
28 V
V
CES
60 V
V
EBO
3.5 V
P
DISS
300 W @ T
C
= 25
O
C
-65
O
C to +200
O
C
T
J
T
STG
-65
O
C to +150
O
C
θ
JC
0.55
O
C/W
PACKAGE STYLE .400 BAL FLG(C)
ORDER CODE: ASI10652
MINIMUM
inches / mm
.380 / 9.65
.120 / 3.05
.780 / 19.81
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.130 / 3.30
.820 / 20.83
.390 / 9.91
1.090 / 27.69
H
DIM
K
L
I
J
.003 / 0.08
.060 / 1.52
.007 / 0.18
.070 / 1.78
.205 / 5.21
N
M
.850 / 21.59
.870 / 22.10
.220 / 5.59
.230 / 5.84
.435 / 11.05
.082 / 2.08
.100 / 2.54
.407 / 10.34
.395 / 10.03
.080x45°
A
B
F
G
H
I
J
K
L
M
(4X).060 R
.1925
D
C
E
FULL R
N
1.335 / 33.91
1.345 / 34.16
.210 / 5.33
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|---|---|
| TVU150_07 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
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