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參數(shù)資料
| 型號： | TXB0104RUTR |
| 廠商： | Texas Instruments |
| 文件頁數(shù)： | 2/30頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC VOLT-LEVEL TRANSLATOR 12UQFN |
| 標準包裝： | 1 |
| 邏輯功能： | 變換器，雙向 |
| 位數(shù)： | 4 |
| 輸入類型： | 邏輯 |
| 輸出類型： | 邏輯 |
| 數(shù)據(jù)速率： | 100Mbps |
| 通道數(shù)： | 4 |
| 輸出/通道數(shù)目： | 1 |
| 差分 - 輸入:輸出： | 無/無 |
| 傳輸延遲（最大）： | 4ns |
| 電源電壓： | 1.2 V ~ 3.6 V，1.65 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 封裝/外殼： | 12-UFQFN |
| 供應商設備封裝： | 12-UQFN（2.0x1.7） |
| 包裝： | 標準包裝 |
| 其它名稱： | 296-25888-6 |
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4k
4k
A
B
VCCA
VCCB
One
Shot
One
Shot
One
Shot
One
Shot
T1
T2
T3
T4
SCES650F – APRIL 2006 – REVISED MAY 2012
PRINCIPLES OF OPERATION
Applications
The TXB0104 can be used in level-translation applications for interfacing devices or systems operating at
different interface voltages with one another.
Architecture
The TXB0104 architecture (see Figure 1) does not require a direction-control signal to control the direction of
data flow from A to B or from B to A. In a dc state, the output drivers of the TXB0104 can maintain a high or low,
but are designed to be weak, so that they can be overdriven by an external driver when data on the bus starts
flowing the opposite direction.
The output one shots detect rising or falling edges on the A or B ports. During a rising edge, the one shot turns
on the PMOS transistors (T1, T3) for a short duration, which speeds up the low-to-high transition. Similarly,
during a falling edge, the one shot turns on the NMOS transistors (T2, T4) for a short duration, which speeds up
the high-to-low transition. The typical output impedance during output transition is 70
at VCCO = 1.2 V to 1.8 V,
50
at VCCO = 1.8 V to 3.3 V, and 40 at VCCO = 3.3 V to 5 V.
Figure 1. Architecture of TXB0104 I/O Cell
Input Driver Requirements
Typical IIN vs VIN characteristics of the TXB0104 are shown in Figure 2. For proper operation, the device driving
the data I/Os of the TXB0104 must have drive strength of at least ±2 mA.
10
Copyright 2006–2012, Texas Instruments Incorporated
Product Folder Links: TXB0104
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