參數(shù)資料
型號(hào)： TYN210
廠商： 意法半導(dǎo)體
英文描述： CAT6 SOL PC RED PLE 30FT PLENUM SOLID PATCH CORD
中文描述： 可控硅
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 229K
代理商： TYN210
TYN210 ---> TYN1010
2/4
Symbol
Rth (j-a)
Rth (j-c) DC
Parameter
Value
60
2.5
Unit
°
C/W
°C/W
Junction to ambient
Junction to case for DC
GATE CHARACTERISTICS
(maximum values)
P
G(AV)
= 1W
P
GM
= 10W (tp = 20μs)
I
FGM
= 4A (tp = 20μs)
V
RGM
= 5V
THERMAL RESISTANCE
Symbol
Test conditions
Value
Unit
I
GT
V
D
= 12V (DC)
R
L
= 33
Tj = 25°C
MAX.
15
mA
V
GT
V
D
= 12V (DC)
R
L
= 33
Tj = 25°C
MAX.
1.5
V
V
GD
V
D
= V
DRM
R
L
= 3.3k
Tj =110°C
MIN.
0.2
V
tgt
V
D
= V
DRM
dI
G
/dt = 0.5A/μs
I
G
= 40mA
Tj = 25°C
TYP.
2
μs
I
L
I
G
= 1.2I
GT
Tj = 25°C
TYP.
50
mA
I
H
I
T
= 100mA Gate open
Tj = 25°C
MAX.
30
mA
V
TM
I
TM
= 20A
tp = 380μs
Tj = 25°C
MAX.
1.6
V
I
DRM
I
RRM
V
DRM
rated
V
RRM
rated
Tj = 25°C
MAX.
0.01
mA
Tj = 110°C
MAX.
2
dV/dt
Linear slope up to
V
D
= 67% V
DRM
gate open
Tj = 110°C
MIN.
200
V/
μ
s
tq
V
D
=67%V
DRM
dI
TM
/dt=30 A/
μ
s
I
TM
= 20A
dV
D
/dt= 50V/
μ
s
V
R
= 25V
Tj = 110°C
TYP.
70
μs
ELECTRICAL CHARACTERISTICS
0
1
2
3
4
5
6
7
8
9
0
2
4
6
8
10
12
P (W)
360
O
= 180
o
= 120
o
= 90
o
= 60
o
= 30
o
DC
I
(A)
T(AV)
Fig. 1:
Maximum average power dissipation ver-
sus average on-state current.
0
20
40
60
80
100
120
140
0
2
4
6
8
10
12
-115
-105
-120
-110
-100
-125
P (W)
Tcase ( C)
o
= 180
o
Tamb ( C)
Rth = 0 C/W
2 C/W
4 C/W
6 C/W
Fig. 2:
Correlation between maximum average
power dissipation and maximum allowable temper-
atures (Tamb and Tcase) for different thermal
resistances heatsink + contact.
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