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參數(shù)資料
| 型號(hào)： | U632H16SK25G1 |
| 元件分類： | SRAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM, 25 ns, PDSO28 |
| 封裝： | 0.300 INCH, GREEN, SOP-28 |
| 文件頁(yè)數(shù)： | 8/15頁(yè) |
| 文件大?。?/td> | 229K |
| 代理商： | U632H16SK25G1 |
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2
April 7, 2005
U632H16
Operating Mode
E
HSB
W
G
DQ0 - DQ7
Standby/not selected
H
**
High-Z
Internal Read
L
H
High-Z
Read
L
H
L
Data Outputs Low-Z
Write
L
H
L
*
Data Inputs High-Z
Block Diagram
Truth Table for SRAM Operations
* H or L
Characteristics
All voltages are referenced to VSS = 0 V (ground).
All characteristics are valid in the power supply voltage range and in the operating temperature range specified.
Dynamic measurements are based on a rise and fall time of
≤ 5 ns, measured between 10 % and 90 % of V
I, as well as input levels of VIL = 0 V
and VIH = 3 V. The timing reference level of all input and outputsignals is 1.5 V, with the exception of the tdis-times and ten-times, in which cases
transition is measured
± 200 mV from steady-state voltage.
a:
Stresses greater than those listed under Absolute Maximum Ratings“ may cause permanent damage to the device. This is a stress
rating only, and functional operation of the device at condition above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Absolute Maximum Ratingsa
Symbol
Min.
Max.
Unit
Power Supply Voltage
VCC
-0.5
7
V
Input Voltage
VI
-0.3
VCC+0.5
V
Output Voltage
VO
-0.3
VCC+0.5
V
Power Dissipation
PD
1W
Operating Temperature
C-Type
K-Type
Ta
0
-40
70
85
°C
Storage Temperature
Tstg
-65
150
°C
EEPROM Array
32 x (64 x 8)
STORE
RECALL
SRAM
Array
32 Rows x
64 x 8 Columns
A5
A6
A7
A8
A9
A0 - A10
Store/
Recall
Control
HSB
Ro
w
De
co
d
er
VCCX
VSS
VCAP
G
E
W
Software
Detect
Power
Control
VCCX
VCAP
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
Column I/O
Column Decoder
A0 A1 A2 A3 A4 A10
In
pu
tBu
ffe
rs
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