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參數(shù)資料
| 型號： | UCC2919DTR |
| 廠商： | TEXAS INSTRUMENTS INC |
| 元件分類： | 電源管理 |
| 英文描述： | 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO16 |
| 封裝： | GREEN, PLASTIC, MS-012AC, SOIC-16 |
| 文件頁數(shù)： | 7/27頁 |
| 文件大?。?/td> | 701K |
| 代理商： | UCC2919DTR |
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UCC2919
UCC3919
SLUS374C JULY 1999 REVISED NOVEMBER 2005
15
www.ti.com
APPLICATION INFORMATION
UDG98137
14
13
12
11
0.01
10
9
8
1
CSP
VDD
IMAX
GND
N/C
IBIAS
CSN
PL
R
PL
10k
C T
0.01 F
C OUT
R LOAD
V
OUT
C
IN
2
3
4
5
6
7
0.01 F
CAP
L/R
SD
FLT
R1
4.99k
R2
100k
GATE
CT
V
IN
C SS
10k
BS584
Note 1
NOTES:
1. Optional FET speeds discharge of CSS during fault or shutdown
R
S
Figure 5. Application Circuit
THERMAL INFORMATION
steady state conditions
In normal operation, with a steady state load current below IFAULT, the power dissipation in the external MOSFET
will be:
P
DISS +
R
DS(on)
I
LOAD
2
The junction temperature of the MOSFET can be calculated from:
T
J +
T
A )
P
DISS
q
JA
Where TA is the ambient temperature and θJA is the MOSFET’s thermal resistance from junction to ambient.
If the device is on a heatsink, then the following equation applies:
q
JA + qJC ) qCS ) qSA
Where
θJC is the MOSFET’s thermal resistance from junction to case, θCS is the thermal resistance from case
to sink, and
θSA is the thermal resistance of the heatsink to ambient.
The calculated TJ must be lower than the MOSFET’s maximum junction temperature rating, therefore:
q
JA
T
J(max) *
T
A
P
DISS
(31)
(32)
(33)
(34)
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