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參數(shù)資料
| 型號(hào)： | UMIL80 |
| 元件分類(lèi)： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Very low drop voltage regulators with inhibit |
| 中文描述： | 晶體管|晶體管|叩| 65V的五（巴西）總裁| 12A條一（c）|的SOT - 160VAR |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 136K |
| 代理商： | UMIL80 |
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
UMIL 80
80 Watts, 28 Volts, Class AB
Defcom 200 - 500
MHz
GENERAL DESCRIPTION
The UMIL80 is a double input matched COMMON EMITTER broadband
transistor specifically intended for use in the 200-500 MHz frequency band. It
may be operated in Class AB or C. Gold metallization and silicon diffused
resistors ensure ruggedness and high reliability.
CASE OUTLINE
55HV, Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C 220 Watts
Maximum Voltage and Current
BVces Collector to Emiter Voltage 65 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 12 A
Maximum Temperatures
Storage Temperature - 65 to +150
o
C
Operating Junction Temperature +200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 400 MHz
Vcc = 28 Volts
80
9.0
55
9.5
10
5:1
Watts
Watts
dB
%
BVebo
BVces
BVceo
BVcbo
Cob
h
FE
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Collector to Base Breakdown
Output Capacitance
DC - Current Gain
Thermal Resistance
Ie = 5 mA
Ic = 20 mA
Ie = 20 mA
Ic = 20 mA
Vcb=28 V, F= 1 MHz
Vce = 5 V, Ic = 1 A
4.0
60
31
60
10
80
0.8
Volts
Volts
Volts
Volts
pF
o
C/W
Issue October 1998 : Correct Case from Hu to HV
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