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參數(shù)資料
| 型號： | UN0231C |
| 廠商： | PANASONIC CORP |
| 元件分類： | 衰減器 |
| 英文描述： | RF Power Amplifier Module |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 23K |
| 代理商： | UN0231C |
GaAs PA Module
UN0231C
RF Power Amplifier Module
1
For the preamplifier of the transmitting section in a cellular phone
I
Features
High efficiency with super miniature, 0.08 cc package(7.5
×
7.5
×
1.7 mm)
I
Absolute Maximum Ratings
T
a
=
25
°
C
Parameter
Symbol
Conditions
min
typ
max
Unit
Idle current
Gate current
*1
Circuit current 1
*1
Circuit current 2
*2
Gain 1
*1
Gain 2
*2
2nd harmonics
*1
3rd harmonics
*1
4th harmonics
*1
Voltage standing wave ratio
*1
Iidle
V
DD1
=
V
DD2
=
3.5 V, P
IN
=
No
V
DD1
=
V
DD2
=
3.5 V, P
OUT
=
30.5 dBm
V
DD1
=
V
DD2
=
3.5 V, P
OUT
=
30.5 dBm
V
DD1
=
V
DD2
=
3.5 V, P
OUT
=
27.0 dBm
V
DD1
=
V
DD2
=
3.5 V, P
OUT
=
30.5 dBm
V
DD1
=
V
DD2
=
3.5 V, P
OUT
=
27.0 dBm
V
DD1
=
V
DD2
=
3.5 V, P
OUT
=
30.5 dBm
V
DD1
=
V
DD2
=
3.5 V, P
OUT
=
30.5 dBm
V
DD1
=
V
DD2
=
3.5 V, P
OUT
=
30.5 dBm
V
DD1
=
V
DD2
=
3.5 V, P
OUT
=
27.0 dBm
V
DD1
=
V
DD2
=
3.5 V, P
OUT
=
27.0 dBm
±
900 kHz Detuning, 30 kHz Bandwidth
V
DD1
=
V
DD2
=
3.5 V, P
OUT
=
27.0 dBm
±
1980 kHz Detuning, 30 kHz Bandwidth
110
140
mA
I
GG
I
DD1
I
DD2
G1
4
mA
600
670
mA
390
440
mA
24.0
26.5
dB
G2
25.5
27.5
dB
2f
O
3f
O
4f
O
30
30
30
dBc
dBc
dBc
V
SWR IN
ACPR1
3
Adjacent channel leakage
power suppression 1
*2
45
dBc
Adjacent channel leakage
power suppression 2
*2
ACPR2
57
dBc
I
Electrical Characteristics
V
GG
=
2.5 V, f
=
824 MHz to 849 MHz, T
a
=
25
°
C
±
3
°
C, Nominal : Z
S
=
Z
L
=
50
Unit : mm
Note) *1 : No modulation.
*2 : Offset from QPSK signal.
Parameter
Symbol
Ratings
Unit
Power supply voltage 1
*1
Power supply voltage 2
*1
V
DD1
V
DD2
I
DD1
I
DD2
V
GG
P
IN
P
D
T
case
T
stg
6
V
6
V
Circuit current 1
200
mA
Circuit current 2
800
mA
Gate voltage
4
V
Max input power
10
dBm
Allowable power dissipation
Case temperature
*2
2
W
30 to
+
110
30 to
+
120
°
C
°
C
Storage temperature
Note)
1. The reverse of the device is solderd to the plate
2. *1 : V
GG
=
3.5 V
*2 : T
case
=
25
°
C
1 :P
IN
2 :V
DD1
3 :V
DD2
4 :P
OUT
5 :GND
6 :V
GG
7 :GND
8 :GND
PAM01
9 : GND
10 : GND
11 : GND
12 : GND
2
1
3
7
8
9
0
1
±
0
2-1.2
7.5
±
0.15
4-0.7
(0.9)
7
5
7
±
0
4
6
12
11
10
4
Tolerance dimension
without indication
: ±0.3
φ
0.8
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