參數(shù)資料
型號: UN1122
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer transistor
中文描述: 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: M-A1, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 84K
代理商: UN1122
2
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
I
CBO
I
CEO
I
CEO
V
CB
= –50V, I
E
= 0
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
V
CE
= –50V, I
B
= 0
–1
μ
A
UN112X
– 0.1
Collector cutoff current
–1
μ
A
UN112X
– 0.5
UN1121
–5
UN1122/112X/112Y
I
EBO
V
EB
= –6V, I
C
= 0
–2
mA
UN1123/1124
–1
Collector to base voltage
V
CBO
I
C
= –10
μ
A, I
E
= 0
–50
V
UN1121
40
UN1122/112Y
h
FE
V
CE
= –10V, I
C
= –100mA
50
UN1123/1124
60
UN112X
20
Collector to emitter saturation voltage
V
CE(sat)
V
CE(sat)
V
CE(sat)
V
OH
V
OL
f
T
I
C
= –100mA, I
B
= –5mA
I
C
= –10mA, I
B
= – 0.3mA
I
C
= –50mA, I
B
= –5mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 500
V
CC
= –5V, V
B
= –3.5V, R
L
= 500
V
CB
= –10V, I
E
= 50mA, f = 200MHz
– 0.25
UN112X
– 0.25
V
UN112Y
– 0.15
Output voltage high level
–4.9
V
Output voltage low level
– 0.2
V
Transition frequency
200
MHz
UN1121
2.2
UN1122
4.7
UN1123
R
1
(–30%)
10
(+30%)
k
UN112X
0.27
UN112Y
3.1
Resistance ratio
0.8
1.0
1.2
UN1124
R
1
/R
2
0.22
UN112X
0.054
UN112Y
0.67
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Common characteristics chart
P
T
— Ta
0
0
160
40
120
80
200
600
400
800
Ambient temperature Ta (C)
T
T
相關(guān)PDF資料
PDF描述
UN1124 Silicon PNP epitaxial planer transistor
UN112X Silicon PNP epitaxial planer transistor
UN112Y Silicon PNP epitaxial planer transistor
UN1218 Silicon NPN epitaxial planer transistor
UN1210 Silicon NPN epitaxial planer transistor
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