參數(shù)資料
型號(hào): UN112Y
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: Silicon PNP epitaxial planer transistor
中文描述: 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: M-A1, 3 PIN
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 84K
代理商: UN112Y
2
Transistors with built-in Resistor
UN1121/1122/1123/1124/112X/112Y
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
I
CBO
I
CEO
I
CEO
V
CB
= –50V, I
E
= 0
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
V
CE
= –50V, I
B
= 0
–1
μ
A
UN112X
– 0.1
Collector cutoff current
–1
μ
A
UN112X
– 0.5
UN1121
–5
UN1122/112X/112Y
I
EBO
V
EB
= –6V, I
C
–2
mA
UN1123/1124
–1
Collector to base voltage
V
CBO
I
C
= –10
μ
A, I
E
= 0
–50
V
UN1121
40
UN1122/112Y
h
FE
V
CE
= –10V, I
C
= –100mA
50
UN1123/1124
60
UN112X
20
Collector to emitter saturation voltage
V
CE(sat)
V
CE(sat)
V
CE(sat)
V
OH
V
OL
f
T
I
C
= –100mA, I
B
= –5mA
I
C
= –10mA, I
B
= – 0.3mA
I
C
= –50mA, I
B
= –5mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 500
V
CC
= –5V, V
B
= –3.5V, R
L
= 500
V
CB
= –10V, I
E
= 50mA, f = 200MHz
– 0.25
UN112X
– 0.25
V
UN112Y
– 0.15
Output voltage high level
–4.9
V
Output voltage low level
– 0.2
V
Transition frequency
200
MHz
UN1121
2.2
UN1122
4.7
UN1123
R
1
(–30%)
10
(+30%)
k
UN112X
0.27
UN112Y
3.1
Resistance ratio
0.8
1.0
1.2
UN1124
R
1
/R
2
0.22
UN112X
0.054
UN112Y
0.67
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Common characteristics chart
P
T
— Ta
0
0
160
40
120
80
200
600
400
800
Ambient temperature Ta (C)
T
T
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