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參數(shù)資料
| 型號： | UN1218 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer transistor |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 179K |
| 代理商： | UN1218 |
2
Transistors with built-in Resistor
I
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
I
CBO
I
CEO
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
0.1
μ
A
μ
A
0.5
UN1211
0.5
UN1212/1214/121E/121D
0.2
UN1213
0.1
UN1215/1216/1217/1210
I
EBO
V
EB
= 6V, I
C
= 0
0.01
mA
UN121F/121K
1.0
UN1219
1.5
UN1218/121L
2.0
Collector to base voltage
V
CBO
V
CEO
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
50
V
Collector to emitter voltage
50
V
UN1211
35
UN1212/121E
60
UN1213/1214
h
FE
V
CE
= 10V, I
C
= 5mA
80
UN1215*/1216*/1217*/1210*
160
460
UN121F/121D/1219
30
UN1218/121K/121L
20
Collector to emitter saturation voltage
V
CE(sat)
V
OH
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
V
CC
= 5V, V
B
= 3.5V, R
L
= 1k
V
CC
= 5V, V
B
= 10V, R
L
= 1k
V
CC
= 5V, V
B
= 6V, R
L
= 1k
V
CB
= 10V, I
E
= –2mA, f = 200MHz
0.25
V
Output voltage high level
4.9
V
Output voltage low level
0.2
UN1213/121K
V
OL
0.2
V
UN121D
0.2
UN121E
0.2
Transition frequency
f
T
80
MHz
UN1211/1214/1215/121K
10
UN1212/1217
22
UN1213/121D/121E/1210
R
1
(–30%)
47
(+30%)
k
UN1216/121F/121L
4.7
UN1218
0.51
UN1219
1
UN1211/1212/1213/121L
0.8
1.0
1.2
UN1214
0.17
0.21
0.25
UN1218/1219
0.08
0.1
0.12
UN121D
R
1
/R
2
4.7
UN121E
2.14
UN121F
0.47
UN121K
2.13
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Resis-
tance
ratio
UN1211/1212/1213/1214/1215/1216/1217/1218/
1219/1210/121D/121E/121F/121K/121L
* h
FE
rank classification (UN1215/1216/1217/1210)
Rank
Q
R
S
h
FE
160 to 260
210 to 340
290 to 460
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PDF描述 |
|---|---|
| UN1210 | Silicon NPN epitaxial planer transistor |
| UN1213 | Silicon NPN epitaxial planer transistor |
| UN1214 | Silicon NPN epitaxial planer transistor |
| UN1215 | Flash Memory IC; Access Time, Tacc:110ns; Package/Case:64-BGA; Supply Voltage:3V; Memory Size:64Mbit |
| UN1216 | Silicon NPN epitaxial planer transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UN1219 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN121D | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| UN121E | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN121F | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN121K | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
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