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參數(shù)資料
| 型號： | UN2003AI |
| 廠商： | Texas Instruments, Inc. |
| 英文描述： | HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON TRANSISTOR ARRAY |
| 中文描述： | 高電壓，大電流達林頓晶體管陣列 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 302K |
| 代理商： | UN2003AI |
www.ti.com
Absolute Maximum Ratings
(1)
at 25
°
C free-air temperature (unless otherwise noted)
Electrical Characteristics
T
A
= 25
°
C
ULN2003AI
HIGH-VOLTAGE, HIGH-CURRENT
DARLINGTON TRANSISTOR ARRAY
SLRS054B–JULY 2003–REVISED FEBRUARY 2005
MIN
MAX
UNIT
V
V
V
mA
mA
A
°
C
V
CC
Collector-emitter voltage
Clamp diode reverse voltage
(2)
Input voltage
(2)
Peak collector current
(3)(4)
Output clamp current
Total emitter-terminal current
Operating free-air temperature range
50
50
30
V
I
500
500
–2.5
105
73
67
108
150
150
I
OK
T
A
–40
D package
N package
PW package
θ
JA
Package thermal impedance
(3)(4)
°
C/W
T
J
T
stg
Operating virtual junction temperature
Storage temperature range
°
C
°
C
–65
(1)
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.
Maximum power dissipation is a function of T
(max),
θ
, and T
. The maximum allowable power dissipation at any allowable ambient
temperature is P
= (T
(max) – T
)/
θ
. Operating at the absolute maximum T
J
of 150
°
C can affect reliability.
The package thermal impedance is calculated in accordance with JESD 51-7.
(2)
(3)
(4)
PARAMETER
TEST FIGURE
TEST CONDITIONS
I
C
= 200 mA
V
CE
= 2 V
MIN
TYP
MAX
2.4
2.7
UNIT
V
I(on)
On-state input voltage
5
I
C
= 250 mA
I
C
= 300 mA
I
C
= 100 mA
I
C
= 200 mA
I
C
= 350 mA
I
I
= 0
V
3
I
I
= 250
μ
A,
I
I
= 350
μ
A,
I
I
= 500
μ
A,
V
CE
= 50 V,
I
F
= 350 mA
V
CE
= 50 V,
V
I
= 3.85 V
V
R
= 50 V
V
I
= 0,
0.9
1.1
1.3
1.6
50
V
CE(sat)
Collector-emitter saturation voltage
4
1
V
1.2
I
CEX
V
F
I
I(off)
I
I
I
R
C
i
Collector cutoff current
Clamp forward voltage
Off-state input current
Input current
Clamp reverse current
Input capacitance
1
7
2
3
6
μ
A
V
μ
A
mA
μ
A
pF
1.7
65
0.93
2
I
C
= 500
μ
A
50
1.35
50
25
f = 1 MHz
15
3
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