參數(shù)資料
型號: UN5211
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN
文件頁數(shù): 8/17頁
文件大?。?/td> 438K
代理商: UN5211
UNR521x Series
8
SJH00024CED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR5217
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
10
1
6
5
4
3
2
1
1
10
10
2
C
o
Collector-base voltage V
CB
(V)
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=
5 V
T
a
=
25
°
C
10
2
10
1
10
1
1
10
10
2
1
10
10
2
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
0
12
2
10
4
8
6
0
120
100
80
60
40
20
C
C
Collector-emitter voltage V
CE
(V)
T
a
=
25
°
C
I
B
=
1 .0 mA
0.90.8 mA
0.1 mA
0.2 mA
0.3 mA
0.4 mA
0.5 mA
0.7 0.6 mA
10
2
10
1
10
1
1
10
10
2
1
10
10
2
C
C
Collector current I
C
(mA)
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
100
200
300
400
10
10
2
10
3
F
F
Collector current I
C
(mA)
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
10
2
10
1
10
1
1
10
10
2
1
10
10
2
I
I
Output current I
O
(mA)
V
O
=
0.2 V
T
a
=
25
°
C
1
0.4
10
10
2
10
3
10
4
1.4
1.2
1.0
0.8
0.6
Input voltage V
IN
(V)
O
O
μ
A
V
O
=
5 V
T
a
=
25
°
C
0
10
1
6
5
4
3
2
1
1
10
10
2
C
o
Collector-base voltage V
CB
(V)
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
相關(guān)PDF資料
PDF描述
UNR5212 Composite Device - Transistors with built-in Resistor
UN5212 Composite Device - Transistors with built-in Resistor
UN521K Composite Device - Transistors with built-in Resistor
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UN521L Composite Device - Transistors with built-in Resistor
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