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參數(shù)資料
| 型號(hào)： | UN5219 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件頁(yè)數(shù)： | 1/17頁(yè) |
| 文件大?。?/td> | 438K |
| 代理商： | UN5219 |
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Transistors with built-in Resistor
UNR521x Series
(UN521x Series)
Silicon NPN epitaxial planar type
1
Publication date: January 2004
SJH00024CED
For digital circuits
■
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
S-Mini type package, allowing automatic insertion through the tape
packing and magazine packing
■
Resistance by Part Number
Marking symbol (R
1
)
(UN5210)
8L
(UN5211)
8A
(UN5212)
8B
(UN5213)
8C
(UN5214)
8D
(UN5215)
8E
(UN5216)
8F
(UN5117)
8H
(UN5218)
8I
(UN5219)
8K
UNR521D (UN521D)
UNR521E (UN521E)
UNR521F (UN521F)
UNR521K (UN521K)
UNR521L (UN521L)
UNR521M (UN521M)
UNR521N (UN521N)
UNR521T (UN521T)
UNR521V (UN521V)
UNR521Z (UN521Z)
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
4.7 k
4.7 k
47 k
47 k
47 k
2.2 k
22 k
UNR5210
UNR5211
UNR5212
UNR5213
UNR5214
UNR5215
UNR5216
UNR5217
UNR5218
UNR5219
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
47 k
47 k
4.7 k
10 k
4.7 k
2.2 k
4.7 k
22 k
2.2 k
4.7 k
8M
8N
8O
8P
8Q
EL
EX
EZ
FD
FF
■
Absolute Maximum Ratings
T
a
=
25
°
C
Note) The part numbers in the parenthesis show conventional part number.
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
B
R
1
R
2
C
E
2
±
0
1.3
±
0.1
0.3
+0.1
2.0
±
0.2
1
±
0
(
1
3
2
(0.65) (0.65)
0
±
0
0
±
0
0
0
+
–
0.15
+0.10
5
10
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
50
V
Collector current
100
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR521D | Composite Device - Transistors with built-in Resistor |
| UN521D | Composite Device - Transistors with built-in Resistor |
| UNR521E | Composite Device - Transistors with built-in Resistor |
| UN521E | Composite Device - Transistors with built-in Resistor |
| UNR521F | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UN521D | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN521E | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN521F | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| UN521K | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN521L | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
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