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參數(shù)資料
| 型號： | UN521T |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件頁數(shù)： | 2/17頁 |
| 文件大小： | 438K |
| 代理商： | UN521T |
UNR521x Series
2
SJH00024CED
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
50
V
Collector-emitter voltage (Base open)
V
CEO
50
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
0.1
μ
A
Collector-emitter cutoff current (Base open)
0.5
Emitter-base
UNR5210/5215/5216/5217
I
EBO
0.01
mA
cutoff current
UNR5213
0.1
(Collector
UNR5212/5214/521D/
0.2
open)
521E/521M/521N/521T
UNR521Z
0.4
UNR5211
0.5
UNR521F/521K
1.0
UNR5219
1.5
UNR5218/521L/521V
2.0
Forward
UNR521V
h
FE
V
CE
=
10 V, I
C
=
5 mA
6
20
current
UNR5218/521K/521L
20
transfer
UNR5219/521D/521F
30
ratio
UNR5211
35
UNR5212/521E
60
UNR521Z
60
200
UNR5213/5214/521M
80
UNR521N/521T
80
400
UNR5210
*
/5215
*
/5216
*
/5217
*
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
10 mA, I
B
=
0.3 mA
I
C
=
10 mA, I
B
=
1.5 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
6.0 V, R
L
=
1 k
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
0.25
V
UNR521V
Output voltage high-level
V
OH
V
OL
4.9
V
Output voltage low-level
0.2
V
UNR5213/521K
UNR521D
UNR521E
Transition frequency
f
T
150
MHz
Input
UNR5218
R
1
30%
0.51
+
30%
k
resistance UNR5219
1.0
UNR521M/521V
2.2
UNR5216/521F/521L/521N
UNR521Z
4.7
UNR5211/5214/5215/521K
10
UNR5212/5217/521T
22
UNR5210/5213/521D/521E
47
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
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|---|---|
| UNR521V | Composite Device - Transistors with built-in Resistor |
| UN521V | Composite Device - Transistors with built-in Resistor |
| UNR521Z | Composite Device - Transistors with built-in Resistor |
| UN521Z | Composite Device - Transistors with built-in Resistor |
| UNR5213 | Composite Device - Transistors with built-in Resistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UN521V | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN521Z | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UN6110 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer transistor |
| UN6110Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71 |
| UN6110R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SC-71 |
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