參數(shù)資料
型號: UN521V
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN
文件頁數(shù): 3/17頁
文件大?。?/td> 438K
代理商: UN521V
UNR521x Series
3
SJH00024CED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Resistance
UNR521M
R
1
/R
2
0.047
ratio
UNR521N
0.1
UNR5218/5219
0.08
0.10
0.12
UNR521Z
0.21
UNR5214
0.17
0.21
0.25
UNR521T
0.47
UNR521F
0.37
0.47
0.57
UNR521V
1.0
UNR5211/5212/5213/521L
0.8
1.0
1.2
UNR521K
1.70
2.13
2.60
UNR521E
1.70
2.14
2.60
UNR521D
3.7
4.7
5.7
Electrical Characteristics (continued)
T
a
=
25
°
C
±
3
°
C
Characteristics charts of UNR5210
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Common characteristics chart
P
T
T
a
0
12
2
10
4
8
6
0
60
50
40
30
20
10
C
C
Collector-emitter voltage V
CE
(V)
T
a
=
25
°
C
I
B
=
1.0 mA
0.1 mA
0.3 mA
0.7 0.0.0.4 mA
0.90.8 mA
10
2
10
1
10
1
1
10
10
2
1
10
10
2
C
C
Collector current I
C
(mA)
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
0
1
100
200
300
400
10
10
2
10
3
F
F
Collector current I
C
(mA)
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
0
0
160
40
120
80
240
200
160
120
80
40
Ambient temperature T
a
(
°
C)
T
T
相關(guān)PDF資料
PDF描述
UNR521Z Composite Device - Transistors with built-in Resistor
UN521Z Composite Device - Transistors with built-in Resistor
UNR5213 Composite Device - Transistors with built-in Resistor
UN5213 Composite Device - Transistors with built-in Resistor
UNR5214 Composite Device - Transistors with built-in Resistor
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