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參數(shù)資料
| 型號： | UN9212J |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN |
| 文件頁數(shù)： | 15/19頁 |
| 文件大?。?/td> | 400K |
| 代理商： | UN9212J |
15
Transistors with built-in Resistor
UNR921xJ Series
SJH00039BED
Characteristics charts of UNR921LJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
Characteristics charts of UNR921MJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
V
IN
I
O
0
12
2
10
4
8
6
0
240
200
160
120
80
40
I
B
=
1.0 mA
0.8 mA
0.2 mA
0.4 mA
0.6 mA
T
a
=
25
°
C
Collector-emitter voltage V
CE
(V)
C
C
10
2
10
1
1
10
10
2
I
C
/
I
B
=
10
25
°
C
T
a
=
75
°
C
25
°
C
1
10
10
2
10
3
C
C
Collector current I
C
(mA)
0
240
200
160
120
80
40
1
10
10
2
10
3
V
CE
=
10 V
25
°
C
25
°
C
T
a
=
75
°
C
F
F
Collector current I
C
(mA)
1
10
10
2
0
6
5
4
3
2
1
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
C
(
o
Collector-base voltage V
CB
(V)
10
2
10
1
1
10
10
2
10
1
1
10
10
2
V
O
=
0.2 V
T
a
=
25
°
C
I
I
Output current I
O
(mA)
0
0
12
2
10
4
8
6
240
200
160
120
80
40
T
a
=
25
°
C
I
B
=
1.0 mA
0.2 mA
0.1 mA
0.3 mA
0.4 mA
0.5 mA
0.6 mA
0.0.0.7 mA
Collector-emitter voltage V
CE
(V)
C
C
10
3
1
10
2
10
1
1
10
10
10
2
10
3
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25C
C
C
Collector current I
C
(mA)
0
1
100
200
300
500
400
10
10
2
10
3
V
CE
=
10 V
T
a
=
75
°
C
25
°
C
25
°
C
F
F
Collector current I
C
(mA)
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| UNR9213J | Composite Device - Transistors with built-in Resistor |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| UN9213 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| UN9213J | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type |
| UN9213J-TX | 制造商:Panasonic Industrial Company 功能描述: |
| UN9214 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer transistor |
| UN9214J | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
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