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參數(shù)資料
| 型號(hào)： | UN921EJ |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN |
| 文件頁數(shù)： | 12/19頁 |
| 文件大小： | 400K |
| 代理商： | UN921EJ |
12
UNR921xJ Series
Transistors with built-in Resistor
SJH00039BED
C
ob
V
CB
I
O
V
IN
V
IN
I
O
C
ob
V
CB
I
O
V
IN
V
IN
I
O
Characteristics charts of UNR921DJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
10
20
30
40
f
=
1 MHz
T
a
=
25
°
C
1
10
10
2
C
(
o
Collector-base voltage V
CB
(V)
10
1
10
2
0
0.4
0.8
V
O
=
5 V
T
a
=
25
°
C
1
10
O
O
Input voltage V
IN
(V)
10
1
1
10
1
10
10
2
V
O
=
0.2 V
T
a
=
25
°
C
I
I
Output current I
O
(mA)
T
a
=
25
°
C
I
B
=
1.0 mA
0
12
2
10
4
8
6
0
30
25
20
15
10
5
0.1 mA
0.2 mA
0.50.4 0.3 mA
0.0.7 mA
0.8 0.9 mA
Collector-emitter voltage V
CE
(V)
C
C
10
2
10
1
1
10
10
2
10
1
1
10
10
2
I
C
/
I
B
=
10
25
°
C
25
°
C
T
a
=
75
°
C
C
C
Collector current I
C
(mA)
0
40
80
120
160
1
10
10
2
10
3
V
CE
=
10 V
25
°
C
25
°
C
T
a
=
75
°
C
F
F
Collector current I
C
(mA)
0
10
1
6
5
4
3
2
1
1
10
10
2
f
=
1 MHz
I
E
=
0
T
a
=
25
°
C
C
(
o
Collector-base voltage V
CB
(V)
3.5
3.0
1.5
2.0
Input voltage V
IN
(V)
2.5
4.0
V
O
=
5 V
T
a
=
25
°
C
1
10
10
2
10
3
10
4
O
O
μ
A
10
2
10
1
1
10
10
2
10
1
1
10
10
2
V
O
=
0.2 V
T
a
=
25
C
I
I
Output current I
O
(mA)
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| UN921LJ | Composite Device - Transistors with built-in Resistor |
| UNR921MJ | Composite Device - Transistors with built-in Resistor |
| UN921MJ | Composite Device - Transistors with built-in Resistor |
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