參數(shù)資料
型號(hào): UN921MJ
廠商: Panasonic Corporation
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 復(fù)合裝置-內(nèi)置晶體管,電阻,
文件頁數(shù): 17/19頁
文件大?。?/td> 400K
代理商: UN921MJ
17
Transistors with built-in Resistor
UNR921xJ Series
SJH00039BED
Characteristics charts of UNR921TJ
Characteristics charts of UNR921VJ
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
I
O
V
IN
V
IN
I
O
I
C
V
CE
V
CE(sat)
I
C
h
FE
I
C
0
0
2
10
4
8
6
40
120
80
160
Collector-emitter voltage V
CE
(V)
C
C
0.7 0.8 mA
0.6 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
I
B
=
1.0 mA
0.9 mA
T
a
=
25
°
C
0.5 mA
10
10
2
10
1
10
2
10
3
25
°
C
25
°
C
T
a
=
75
°
C
I
C
/
I
B
=
10
C
C
Collector current I
C
(mA)
0
10
1
100
400
300
200
1
10
10
2
25
°
C
25
°
C
T
a
=
75
°
C
V
CE
=
10 V
F
F
Collector current I
C
(mA)
0
1
4
3
2
1
10
10
2
C
(
o
Collector-base voltage V
CB
(V)
10
3
10
1
10
2
0.25
1
10
10
2
0.75
1.25
V
O
=
5 V
T
a
=
25
°
C
O
O
Input voltage V
IN
(V)
10
1
1
10
10
2
10
3
10
2
Output current I
O
(mA)
10
1
1
10
2
10
V
O
=
0.2 V
T
a
=
25
°
C
I
I
0
12
2
10
4
8
6
0
40
120
80
160
I
B
=
1.0 mA
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.8 mA
T
a
=
25
°
C
0.9 mA
0.3 mA
Collector-emitter voltage V
CE
(V)
C
C
10
2
10
1
1
10
1
10
10
2
10
3
I
C
/
I
B
=
10
25
°
C
25
°
C
T
a
=
75
°
C
C
C
Collector current I
C
(mA)
0
240
200
160
120
80
40
1
10
10
2
10
3
V
CE
=
10 V
25
°
C
T
a
=
75
°
C
25
°
C
F
F
Collector current I
C
(mA)
相關(guān)PDF資料
PDF描述
UN921TJ Composite Device - Transistors with built-in Resistor
UNR921N Silicon NPN epitaxial planer transistor
UNR921AJ Silicon NPN epitaxial planer transistor
UNR921BJ Silicon NPN epitaxial planer transistor
UNR921CJ Silicon NPN epitaxial planar type
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UN921MJ-TX 制造商:Panasonic Industrial Company 功能描述:
UN921N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
UN921TJ 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type
UN-A B 制造商:Omnimount 功能描述:Unistrut Adapter
UNA0206 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Transistor array to drive the small motor