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參數(shù)資料
| 型號： | UNR2123 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planar type |
| 中文描述： | 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 176K |
| 代理商： | UNR2123 |
Transistors with built-in Resistor
UNR212x Series
(UN212x Series)
Silicon PNP epitaxial planar type
1
Publication date: December 2003
SJH00008CED
For digital circuits
■
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
■
Resistance by Part Number
Marking Symbol (R
1
)
(UN2121)
7A
(UN2122)
7B
(UN2123)
7C
(UN2124)
7D
UNR212X (UN212X)
UNR212Y (UN212Y)
(R
2
)
2.2 k
4.7 k
10 k
10 k
5 k
4.6 k
UNR2121
UNR2122
UNR2123
UNR2124
2.2 k
4.7 k
10 k
2.2 k
0.27 k
3.1 k
7I
7Y
■
Absolute Maximum Ratings
T
a
=
25
°
C
B
R
1
R
2
C
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
Note) The part numbers in the parenthesis show conventional part number.
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
50
500
V
Collector-emitter voltage (Base open)
V
CEO
V
Collector current
I
C
P
T
mA
Total power dissipation
200
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
50
50
V
Collector-emitter voltage (Base open)
V
CEO
I
CBO
V
Collector-base cutoff current (Emitter open)
1.0
0.1
1.0
0.5
5
2
1
μ
A
UNR212X
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
=
50 V, I
B
=
0
μ
A
UNR212X
Emitter-base
UNR2121
I
EBO
V
EB
=
6 V, I
C
=
0
mA
cutoff current UNR2122/212X/212Y
(Collector open)
UNR2123/2124
Forward current
UNR2121
h
FE
V
CE
=
10 V, I
C
=
5 mA
40
transfer ratio
UNR2122/212Y
50
UNR2123/2124
60
UNR212X
20
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| UNR2124 | Silicon PNP epitaxial planar type |
| UNR212X | Silicon PNP epitaxial planar type |
| UNR212Y | Silicon PNP epitaxial planar type |
| UNR2122 | Silicon PNP epitaxial planar type |
| UNR2221 | Silicon NPN epitaxial planar type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| UNR2123(UN2123) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
| UNR212300L | 功能描述:TRANS PNP W/RES 60 HFE MINI-3 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標準包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
| UNR2124 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planar type |
| UNR2124(UN2124) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor |
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