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參數資料
| 型號： | UNR2226 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:120ns; Mounting Type:Through Hole RoHS Compliant: Yes |
| 中文描述： | 600 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 110K |
| 代理商： | UNR2226 |
1
Transistors with built-in Resistor
UNR2225
(UN2225)
, UNR2226
(UN2226)
,
UNR2227
(UN2227)
Silicon NPN epitaxial planar type
Publication date: December 2003
SJH00040CED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
1
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
1
μ
A, I
C
=
0
V
CB
=
30 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
10 V, I
C
=
100 mA
30
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
20
V
Emitter-base voltage (Collector open)
5
V
Collector-base cutoff current (Emitter open)
I
CBO
1
μ
A
μ
A
Emitter
-base
cutoff current (Collector open)
I
EBO
h
FE
1
Forward current
UNR2227
70
transfer ratio
UNR2225/2226
100
600
Collector-emitter saturation voltage
V
CE(sat)
R
1
I
C
=
50 mA, I
B
=
2.5 mA
80
mV
Input resistance
UNR2226
30%
4.7
+
30%
k
UNR2227
6.8
UNR2225
10
Resistance ratio
UNR2227
R
1
/R
2
0.8
1.0
1.2
For muting
■
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
■
Resistance by Part Number
Marking Symbol (R
1
)
(UN2225)
FZ
(UN2226)
FY
(UN2227)
FW
(R
2
)
6.8 k
UNR2225
UNR2226
UNR2227
10 k
4.7 k
6.8 k
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Internal Connection
Note) The part numbers in the parenthesis show conventional part number.
B
R
1
R
2
C
E
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
30
V
Collector-emitter voltage (Base open)
20
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
P
T
600
mA
Total power dissipation
200
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
相關PDF資料 |
PDF描述 |
|---|---|
| UN2225 | Silicon NPN epitaxial planar type |
| UNR4211 | Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:1Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:45ns; Series:AM29 RoHS Compliant: Yes |
| UNR4212 | Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.25V; Access Time, Tacc:45ns; Mounting Type:Surface Mount RoHS Compliant: Yes |
| UNR4213 | Silicon NPN epitaxial planar type |
| UNR4214 | Flash Memory IC; Access Time, Tacc:45ns; Package/Case:32-DIP; Memory Configuration:128K x 8; Memory Size:1Mbit; Supply Voltage Max:5.25V; Mounting Type:Through Hole |
相關代理商/技術參數 |
參數描述 |
|---|---|
| UNR2226(UN2226) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:UNR2226 (UN2226) - NPN Transistor with built-in Resistor |
| UNR222600L | 功能描述:TRANS NPN W/RES 100 HFE MINI-3P RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路﹐預偏壓式 系列:- 標準包裝:10,000 系列:- 晶體管類型:NPN - 預偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應商設備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
| UNR2227 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| UNR2227(UN2227) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內蔵型トランジスタ |
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