參數(shù)資料
型號(hào)： UNR4218
廠商： PANASONIC CORP
元件分類： 小信號(hào)晶體管
英文描述： Flash Memory IC; Access Time, Tacc:55ns; Package/Case:32-TSOP; Leaded Process Compatible:No; Memory Configuration:128K x 8; Memory Size:1Mbit; Peak Reflow Compatible (260 C):No; Supply Voltage Max:5.5V; Mounting Type:Surface Mount RoHS Compliant: No
中文描述： 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝： ROHS COMPLIANT, NS-B1, 3 PIN
文件頁數(shù)： 2/14頁
文件大小： 334K
代理商： UNR4218
2
UNR421x Series
SJH00020BED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
= 50 V, I
E
= 0
50
V
Collector-emitter voltage (Base open)
V
CEO
I
CBO
50
V
Collector-base cutoff current (Emitter open)
0.1
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 50 V, I
B
= 0
0.5
Emitter-base
UNR4210/4215/4216/4217
I
EBO
V
EB
= 6 V, I
C
= 0
0.01
mA
cutoff current
UNR4213
0.1
(Collector open)
UNR4212/4214/421D/421E
0.2
UNR4211
0.5
UNR421F/421K
1.0
UNR4219
1.5
UNR4218/421L
2.0
Forward current
UNR4218/421K/421L
h
FE
V
CE
=
10 V, I
C
=
5 mA
20
transfer ratio
UNR4219/421D/421F
30
UNR4211
35
UNR4212/421E
60
UNR4213/4214
80
UNR4210
*
/4215
*
/4216
*
/
4217
*
160
460
Collector-emitter saturation voltage
V
CE(sat)
V
OH
V
OL
I
C
=
10 mA, I
B
=
0.3 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 k
V
CB
=
10 V, I
E
=
2 mA, f
=
200 MHz
0.25
V
Output voltage high-level
4.9
V
Output voltage low-level
0.2
V
UNR4213/421K
UNR421D
UNR421E
Transition frequency
f
T
150
MHz
Input
UNR4218
R
1
30%
0.51
+
30%
k
resistance
UNR4219
1.0
UNR4216/421F/421L
4.7
UNR4211/4214/4215/421K
10
UNR4212/4217
22
UNR4210/4213/421D/421E
47
Resistance
UNR4218/4219
R
1
/R
2
0.08
0.10
0.12
ratio
UNR4214
0.17
0.21
0.25
UNR421F
0.37
0.47
0.57
UNR4211/4212/4213/421L
0.8
1.0
1.2
UNR421K
1.70
2.13
2.60
UNR421E
1.70
2.14
2.60
UNR421D
3.7
4.7
5.7
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*: Rank classification
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
相關(guān)PDF資料
PDF描述
UNR4219 Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PDIP; Supply Voltage Max:5.5V; Access Time, Tacc:55ns; Mounting Type:Surface Mount RoHS Compliant: Yes
UNR421D Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-PLCC; Supply Voltage Max:5.5V; Access Time, Tacc:55ns; Mounting Type:Surface Mount RoHS Compliant: Yes
UNR421E Flash Memory IC; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-DIP; Supply Voltage Max:5.5V; Access Time, Tacc:55ns; Mounting Type:Through Hole RoHS Compliant: Yes
UNR421K Flash Memory IC; Leaded Process Compatible:Yes; Memory Configuration:128K x 8; Memory Size:1Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5.5V; Access Time, Tacc:70ns; Mounting Type:Surface Mount RoHS Compliant: Yes
UNR421L Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:1Mbit; Package/Case:32-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
UNR4218(UN4218) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor
UNR421800A 功能描述:TRANS NPN W/RES 20HFE NEW S TYPE RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242
UNR4219 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type
UNR4219(UN4219) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:複合デバイス － 抵抗內(nèi)蔵型トランジスタ
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