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參數(shù)資料
| 型號： | UNR5154 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Composite Device - Transistors with built-in Resistor |
| 中文描述： | 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SMINI3-G1, SC-70, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 87K |
| 代理商： | UNR5154 |
Transistors with built-in Resistor
UNR5154
(UN5154)
Silicon PNP epitaxial planar type
1
Publication date: December 2003
SJH00023BED
For digital circuits
■
Features
High forward current transfer ratio h
FE
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
S-Mini type package, allowing automatic insertion through tape
packing and magazine packing
■
Absolute Maximum Ratings
T
a
=
25
°
C
Unit: mm
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Internal Connection
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
10
μ
A, I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
30 V, I
E
=
0
V
CE
=
30 V, I
B
=
0
V
EB
=
3 V, I
C
=
0
V
CE
=
10 V, I
C
=
5 mA
I
C
=
50 mA, I
B
=
0.33 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 k
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 k
V
CB
=
10 V, I
E
=
1 mA, f
=
200 MHz
30
30
V
Collector-emitter voltage (Base open)
V
CEO
V
Collector-base cutoff current (Emitter open)
I
CBO
I
CEO
0.1
0.5
0.1
μ
A
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
I
EBO
mA
Forward current transfer ratio
h
FE
80
Collector-emitter saturation voltage
V
CE(sat)
0.5
1.2
V
Output voltage high-level
V
OH
4.9
V
Output voltage low-level
V
OL
f
T
0.2
V
Transition frequency
80
MHz
Input resistance
R
1
30%
10
+30%
k
Resistance ratio
R
1
/R
2
0.213
Note) The part number in the parenthesis shows conventional part number.
B
R
1
(10 k
)
R
2
(47 k
)
C
E
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
2
±
0
1.3
±
0.1
0.3
+0.1
2.0
±
0.2
1
±
0
(
1
3
2
(0.65) (0.65)
0
±
0
0
±
0
0
0
+
–
0.15
+0.10
5
10
Marking Symbol: EV
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
30
30
100
V
Collector-emitter voltage (Base open)
V
CEO
V
Collector current
I
C
P
T
mA
Total power dissipation
150
mW
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
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