參數(shù)資料
型號: UNR9211J
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Composite Device - Transistors with built-in Resistor
中文描述: 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, SSMINI3-F1, SC-89, 3 PIN
文件頁數(shù): 1/19頁
文件大?。?/td> 400K
代理商: UNR9211J
Transistors with built-in Resistor
UNR921xJ Series
(UN921xJ Series)
Silicon NPN epitaxial planar type
1
Publication date: January 2004
SJH00039BED
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
SS-Mini type package, allowing automatic insertion through tape
packing.
Resistance by Part Number
Marking Symbol
(R
1
)
8L
8A
8B
8C
8D
8E
8F
8H
8I
8K
8X
8Y
8Z
8M
8N
8O
8P
8Q
EL
EX
EZ
FD
(R
2
)
10 k
22 k
47 k
47 k
5.1 k
10 k
100 k
47 k
10 k
22 k
10 k
4.7 k
4.7 k
47 k
47 k
47 k
2.2 k
UNR9210J (UN9210J)
UNR9211J (UN9211J)
UNR9212J (UN9212J)
UNR9213J (UN9213J)
UNR9214J (UN9214J)
UNR9215J (UN9215J)
UNR9216J (UN9216J)
UNR9217J (UN9217J)
UNR9218J (UN9218J)
UNR9219J (UN9219J)
UNR921AJ
UNR921BJ
UNR921CJ
UNR921DJ (UN921DJ)
UNR921EJ (UN921EJ)
UNR921FJ (UN921FJ)
UNR921KJ (UN921KJ)
UNR921LJ (UN921LJ)
UNR921MJ
UNR921NJ
UNR921TJ (UN921TJ)
UNR921VJ
47 k
10 k
22 k
47 k
10 k
10 k
4.7 k
22 k
0.51 k
1 k
100 k
100 k
47 k
47 k
4.7 k
10 k
4.7 k
2.2 k
4.7 k
22 k
2.2 k
Absolute Maximum Ratings
T
a
=
25
°
C
Note) The part numbers in the parenthesis show conventional part number.
0.27
±
0.02
3
1
2
0.12
+0.03
0
±
0
(
0
1
±
0
0
0
0
+
(
5
5
1.60
+0.05
1.00
±
0.05
(0.50)(0.50)
+
B
C
E
R
1
R
2
Internal Connection
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-89
SSMini3-F1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
V
CEO
50
V
Collector-emitter voltage (Base open)
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
T
j
125
mW
Junction temperature
125
°
C
°
C
Storage temperature
T
stg
55 to
+
125
相關PDF資料
PDF描述
UN9211J Composite Device - Transistors with built-in Resistor
UNR9212J Composite Device - Transistors with built-in Resistor
UN9212J Composite Device - Transistors with built-in Resistor
UNR9213J Composite Device - Transistors with built-in Resistor
UN9213J Composite Device - Transistors with built-in Resistor
相關代理商/技術參數(shù)
參數(shù)描述
UNR9211J(UN9211J) 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Composite Device - Transistors with built-in Resistor
UNR9211J0L 功能描述:TRANS NPN W/RES 35 HFE SSMINI 3P RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預偏壓式 系列:- 標準包裝:10,000 系列:- 晶體管類型:NPN - 預偏壓 電流 - 集電極 (Ic)(最大):100mA 電壓 - 集電極發(fā)射極擊穿(最大):50V 電阻器 - 基極 (R1)(歐):47k 電阻器 - 發(fā)射極 (R2)(歐):47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA,5V Ib、Ic條件下的Vce飽和度(最大):300mV @ 500µA,10mA 電流 - 集電極截止(最大):- 頻率 - 轉換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70,SOT-323 供應商設備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242
UNR9212 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
UNR9212G0L 功能描述:TRANS NPN W/RES 60HFE SSMINI RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預偏壓式 系列:- 標準包裝:10,000 系列:- 晶體管類型:NPN - 預偏壓 電流 - 集電極 (Ic)(最大):100mA 電壓 - 集電極發(fā)射極擊穿(最大):50V 電阻器 - 基極 (R1)(歐):47k 電阻器 - 發(fā)射極 (R2)(歐):47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA,5V Ib、Ic條件下的Vce飽和度(最大):300mV @ 500µA,10mA 電流 - 集電極截止(最大):- 頻率 - 轉換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70,SOT-323 供應商設備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242